Very large phase shift of microwave signals in a 6 nm Hf x Zr 1− x O 2 ferroelectric at ±3 V

Show simple item record Dragoman, Mircea Modreanu, Mircea Povey, Ian M. Iordanescu, Sergiu Aldrigo, Martino Romanitan, Cosmin Vasilache, Dan Dinescu, Adrian Dragoman, Daniela 2017-09-07T14:27:35Z 2017-09-07T14:27:35Z 2017-08-31
dc.identifier.citation Dragoman, M., Modreanu, M., Povey, I. M., Iordanescu, S., Aldrigo, M., Romanitan, C., Vasilache, D., Dinescu, A. and Dragoman, D. (2017) 'Very large phase shift of microwave signals in a 6 nm Hf x Zr 1− x O 2 ferroelectric at ±3 V', Nanotechnology, 28(38), 38LT04 (5pp). doi:10.1088/1361-6528/aa8425 en
dc.identifier.volume 28 en
dc.identifier.issued 38 en
dc.identifier.startpage 38LT04-1 en
dc.identifier.endpage 38LT04-1 en
dc.identifier.issn 0957-4484
dc.identifier.doi 10.1088/1361-6528/aa8425
dc.description.abstract In this letter, we report for the first time very large phase shifts of microwaves in the 1–10 GHz range, in a 1 mm long gold coplanar interdigitated structure deposited over a 6 nm Hf x Zr1−x O2 ferroelectric grown directly on a high resistivity silicon substrate. The phase shift is larger than 60° at 1 GHz and 13° at 10 GHz at maximum applied DC voltages of ±3 V, which can be supplied by a simple commercial battery. In this way, we demonstrate experimentally that the new ferroelectrics based on HfO2 could play an important role in the future development of wireless communication systems for very low power applications. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher IOP Publishing en
dc.rights © 2017 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at en
dc.subject HfO2 en
dc.subject Ferroelectric en
dc.subject Phase shifter en
dc.title Very large phase shift of microwave signals in a 6 nm Hf x Zr 1− x O 2 ferroelectric at ±3 V en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Mircea Gabriel Modreanu, Tyndall Micronano Electronics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en 2017-09-07T14:12:49Z
dc.description.version Published Version en
dc.internal.rssid 410138321
dc.description.status Peer reviewed en
dc.identifier.journaltitle Nanotechnology en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress en

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