Calculations of the A(1) phonon frequency in photoexcited tellurium
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Fahy, Stephen B.
American Physical Society
Calculations of the A(1) phonon frequency in photoexcited tellurium are presented. The phonon frequency as a function of photoexcited carrier density and phonon amplitude is determined. Recent pump-probe experiments are interpreted in light of these calculations. It is proposed that, in conjunction with measurements of the phonon period in ultrafast pump-probe reflectivity experiments, the calculated frequency shifts can be used to infer the evolution of the density of photoexcited carriers on a subpicosecond time scale. (S0031-9007(99)09219-4).
Initio molecular dynamics , Bonding properties , Silicon , Density , Approximation , Carriers , GaAs , Si
Tangney, P. and Fahy, S. (1999) ' Calculations of the A(1) phonon frequency in photoexcited tellurium', Physical Review Letters, 82(21), 4340-4343 (4pp). doi: 10.1103/PhysRevLett.82.4340
© 1999, American Physical Society