Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD

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dc.contributor.author Mena, Josue
dc.contributor.author Carvajal, Joan J.
dc.contributor.author Martínez, O.
dc.contributor.author Jiménez, J.
dc.contributor.author Zubialevich, Vitaly Z.
dc.contributor.author Parbrook, Peter J.
dc.contributor.author Diaz, Francesc
dc.contributor.author Aguilo, Magdalena
dc.date.accessioned 2017-09-11T13:16:00Z
dc.date.available 2017-09-11T13:16:00Z
dc.date.issued 2017-08-21
dc.identifier.citation Mena, J., Carvajal, J. J., Martínez, O., Jiménez, J., Zubialevich. V. Z., Parbrook, P. J., Diaz, F. and Aguiló, M. (2017)'Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD', Nanotechnology, 28(37) 375701. doi:10.1088/1361-6528/aa7e9d en
dc.identifier.volume 28 en
dc.identifier.issued 37 en
dc.identifier.startpage 375701-1 en
dc.identifier.endpage 375701-9 en
dc.identifier.issn 0957-4484
dc.identifier.uri http://hdl.handle.net/10468/4676
dc.identifier.doi 10.1088/1361-6528/aa7e9d
dc.description.abstract In this paper we study the optical properties of nanoporous gallium nitride (GaN) epitaxial layers grown by chemical vapour deposition on non-porous GaN substrates, using photoluminescence, cathodoluminescence, and resonant Raman scattering, and correlate them with the structural characteristic of these films. We pay special attention to the analysis of the residual strain of the layers and the influence of the porosity in the light extraction. The nanoporous GaN epitaxial layers are under tensile strain, although the strain is progressively reduced as the deposition time and the thickness of the porous layer increases, becoming nearly strain free for a thickness of 1.7 μm. The analysis of the experimental data point to the existence of vacancy complexes as the main source of the tensile strain. en
dc.description.sponsorship Spanish Government (Projects No. TEC2014-55948-R and MAT2016-75716-C2-1-R (AEI/FEDER, UE) CICYT MAT2010-20441-C02 (01 and 02) and ENE2014-56069-C4-4-R (MINECO)); Catalan Authority (Project No. 2014SGR1358.); Institució Catalana de Recerca i Estudis Avançats (ICREA Academia awards (2010ICREA-02 for excellence in research)); Consejería de Educación, Junta de Castilla y León (under Projects VA293U13 and VA081U16.) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher IOP Publishing en
dc.relation.uri http://stacks.iop.org/0957-4484/28/i=37/a=375701
dc.rights © 2017 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6528/aa7e9d en
dc.subject GaN en
dc.subject Porous materials en
dc.subject Structural stress en
dc.subject Optical characterisation en
dc.title Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD en
dc.type Article (non peer-reviewed) en
dc.internal.authorcontactother Peter James Parbrook, Electrical & Electronic Engineering, University College Cork, Cork, Ireland. +353-21-490-3000 Email: p.parbrook@ucc.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 12 months after publication at the request of the publisher. en
dc.check.date 2018-08-21
dc.date.updated 2017-09-11T11:39:57Z
dc.description.version Accepted Version en
dc.internal.rssid 410647326
dc.contributor.funder Consejería de Educación, Junta de Castilla y León en
dc.contributor.funder Institució Catalana de Recerca i Estudis Avançats en
dc.contributor.funder Ministerio de Economía y Competitividad en
dc.contributor.funder Consejo Interinstitucional de Ciencia y Tecnología en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Nanotechnology en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress p.parbrook@ucc.ie en

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