Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors
Loading...
Files
Published Version
Date
2015
Authors
Djara, Vladimir
Cherkaoui, Karim
Negara, M. A.
Hurley, Paul K.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
An alternative multi-frequency inversion-charge pumping (MFICP) technique was developed to directly separate the inversion charge density (N-inv) from the trapped charge density in high-k/InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs). This approach relies on the fitting of the frequency response of border traps, obtained from inversion-charge pumping measurements performed over a wide range of frequencies at room temperature on a single MOSFET, using a modified charge trapping model. The obtained model yielded the capture time constant and density of border traps located at energy levels aligned with the InGaAs conduction band. Moreover, the combination of MFICP and pulsed I-d-V-g measurements enabled an accurate effective mobility vs N-inv extraction and analysis. The data obtained using the MFICP approach are consistent with the most recent reports on high-k/InGaAs. (C) 2015 AIP Publishing LLC.
Description
Keywords
IN0.53GA0.47AS MOSFETs , Inductively coupled plasma , Band gap , III-V semiconductors , Conduction bands , Electron-mobility , Gate dielectrics , Interface Traps , Mos capacitance , Extraction , Density , AL2O3 , Instability , Devices
Citation
Djara, V., Cherkaoui, K., Negara, M. A. and Hurley, P. K. (2015) 'Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors', Journal of Applied Physics, 118(20), 204107 (7pp). doi: 10.1063/1.4936313
Link to publisher’s version
Copyright
© 2015 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Djara, V., Cherkaoui, K., Negara, M. A. and Hurley, P. K. (2015) 'Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors', Journal of Applied Physics, 118(20), 204107 (7pp). doi: 10.1063/1.4936313 and may be found at http://aip.scitation.org/doi/10.1063/1.4936313