Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors

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dc.contributor.author Djara, Vladimir
dc.contributor.author Cherkaoui, Karim
dc.contributor.author Negara, M. A.
dc.contributor.author Hurley, Paul K.
dc.date.accessioned 2017-09-20T10:06:31Z
dc.date.available 2017-09-20T10:06:31Z
dc.date.issued 2015
dc.identifier.citation Djara, V., Cherkaoui, K., Negara, M. A. and Hurley, P. K. (2015) 'Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors', Journal of Applied Physics, 118(20), 204107 (7pp). doi: 10.1063/1.4936313 en
dc.identifier.volume 118
dc.identifier.issued 20
dc.identifier.startpage 1
dc.identifier.endpage 7
dc.identifier.issn 0021-8979
dc.identifier.issn 1089-7550
dc.identifier.uri http://hdl.handle.net/10468/4712
dc.identifier.doi 10.1063/1.4936313
dc.description.abstract An alternative multi-frequency inversion-charge pumping (MFICP) technique was developed to directly separate the inversion charge density (N-inv) from the trapped charge density in high-k/InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs). This approach relies on the fitting of the frequency response of border traps, obtained from inversion-charge pumping measurements performed over a wide range of frequencies at room temperature on a single MOSFET, using a modified charge trapping model. The obtained model yielded the capture time constant and density of border traps located at energy levels aligned with the InGaAs conduction band. Moreover, the combination of MFICP and pulsed I-d-V-g measurements enabled an accurate effective mobility vs N-inv extraction and analysis. The data obtained using the MFICP approach are consistent with the most recent reports on high-k/InGaAs. (C) 2015 AIP Publishing LLC. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/10.1063/1.4936313
dc.rights © 2015 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Djara, V., Cherkaoui, K., Negara, M. A. and Hurley, P. K. (2015) 'Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors', Journal of Applied Physics, 118(20), 204107 (7pp). doi: 10.1063/1.4936313 and may be found at http://aip.scitation.org/doi/10.1063/1.4936313 en
dc.subject IN0.53GA0.47AS MOSFETs en
dc.subject Inductively coupled plasma en
dc.subject Band gap en
dc.subject III-V semiconductors en
dc.subject Conduction bands en
dc.subject Electron-mobility en
dc.subject Gate dielectrics en
dc.subject Interface Traps en
dc.subject Mos capacitance en
dc.subject Extraction en
dc.subject Density en
dc.subject AL2O3 en
dc.subject Instability en
dc.subject Devices en
dc.title Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Paul K. Hurley, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: paul.hurley@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder Irish Research Council for Science, Engineering and Technology
dc.contributor.funder European Commission
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress paul.hurley@tyndall.ie en
dc.identifier.articleid 204107
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Strategic Research Cluster/07/SRC/I1172/IE/SRC FORME: Functional Oxides and Related Materials for Electronics/
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/619325/EU/Compound Semiconductors for 3D integration/COMPOSE3
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/619326/EU/Technology CAD for III-V Semiconductor-based MOSFETs/III-V-MOS


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