Comparative study of polar and semipolar (1122) InGaN layers grown by metalorganic vapour phase epitaxy

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dc.contributor.author Dinh, Duc V.
dc.contributor.author Oehler, F.
dc.contributor.author Zubialevich, Vitaly Z.
dc.contributor.author Kappers, M. J.
dc.contributor.author Alam, Shaif-ul
dc.contributor.author Caliebe, Marian
dc.contributor.author Scholtz, F.
dc.contributor.author Humphreys, C. J.
dc.contributor.author Parbrook, Peter J.
dc.date.accessioned 2017-09-20T10:06:32Z
dc.date.available 2017-09-20T10:06:32Z
dc.date.issued 2014
dc.identifier.citation Dinh, D. V., Oehler, F., Zubialevich, V. Z., Kappers, M. J., Alam, S. N., Caliebe, M., Scholtz, F., Humphreys, C. J. and Parbrook, P. J. (2014) 'Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy', Journal of Applied Physics, 116(15), 153505 (7pp). doi: 10.1063/1.4898569 en
dc.identifier.volume 116
dc.identifier.issued 15
dc.identifier.startpage 1
dc.identifier.endpage 7
dc.identifier.issn 0021-8979
dc.identifier.issn 1089-7550
dc.identifier.uri http://hdl.handle.net/10468/4715
dc.identifier.doi 10.1063/1.4898569
dc.description.abstract InGaN layers were grown simultaneously on (11 (2) over bar2) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature (>= 750 degrees C), the indium content (<15%) of the (11<(2)over bar>2) and (0001) InGaN layers was similar. However, for temperatures less than 750 degrees C, the indium content of the (11 (2) over bar2) InGaN layers (15%-26%) were generally lower than those with (0001) orientation (15%-32%). The compositional deviation was attributed to the different strain relaxations between the (11 (2) over bar2) and (0001) InGaN layers. Room temperature photoluminescence measurements of the (11 (2) over bar2) InGaN layers showed an emission wavelength that shifts gradually from 380 nm to 580 nm with decreasing growth temperature (or increasing indium composition). The peak emission wavelength of the (11 (2) over bar2) InGaN layers with an indium content of more than 10% blue-shifted a constant value of approximate to(50-60) nm when using higher excitation power densities. This blue-shift was attributed to band filling effects in the layers. (C) 2014 AIP Publishing LLC. en
dc.description.sponsorship EU-FP7 ALIGHT project [FP7-280587]; Programme for Research in Third Level Institutions (PRTLI) fourth and fifth cycles; Iranian Ministry of Science, Research and Technology; Science Foundation Ireland en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/10.1063/1.4898569
dc.rights © 2014 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Dinh, D. V., Oehler, F., Zubialevich, V. Z., Kappers, M. J., Alam, S. N., Caliebe, M., Scholtz, F., Humphreys, C. J. and Parbrook, P. J. (2014) 'Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy', Journal of Applied Physics, 116(15), 153505 (7pp). doi: 10.1063/1.4898569 and may be found at http://aip.scitation.org/doi/10.1063/1.4898569 en
dc.subject Yellow luminescence en
dc.subject Gan en
dc.subject Localization en
dc.subject Sapphire en
dc.subject Power en
dc.subject III-V semiconductors en
dc.subject Indium en
dc.subject Photoluminescence en
dc.subject Surface morphology en
dc.subject X-ray diffraction en
dc.title Comparative study of polar and semipolar (1122) InGaN layers grown by metalorganic vapour phase epitaxy en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Duc V. Dinh, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: vanduc.dinh@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress peter.parbrook@tyndall.ie en
dc.identifier.articleid 153505


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