A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures
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Date
2014
Authors
Lin, Jun
Walsh, Lee A.
Hughes, Gregory
Woicik, Joseph C.
Povey, Ian M.
O'Regan, Terrance P.
Hurley, Paul K.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
Capacitance-Voltage (C-V) characterization and hard x-ray photoelectron spectroscopy (HAXPES) measurements have been used to study metal/Al2O3/In0.53Ga0.47As capacitor structures with high (Ni) and low (Al) work function metals. The HAXPES measurements observe a band bending occurring prior to metal deposition, which is attributed to a combination of fixed oxide charges and interface states of donor-type. Following metal deposition, the Fermi level positions at the Al2O3/In0.53Ga0.47As interface move towards the expected direction as observed from HAXPES measurements. The In0.53Ga0.47As surface Fermi level positions determined from both the C-V analysis at zero gate bias and HAXPES measurements are in reasonable agreement. The results are consistent with the presence of electrically active interface states at the Al2O3/In0.53Ga0.47As interface and suggest an interface state density increasing towards the In0.53Ga0.47As valence band edge. (C) 2014 AIP Publishing LLC.
Description
Keywords
Fermi levels , Ozone , III-V semiconductors , Nickel , Capacitance
Citation
Lin, J., Walsh, L., Hughes, G., Woicik, J. C., Povey, I. M., O'Regan, T. P. and Hurley, P. K. (2014) 'A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures', Journal of Applied Physics, 116(2), 024104 (8pp). doi: 10.1063/1.4887517
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Copyright
© 2014 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Lin, J., Walsh, L., Hughes, G., Woicik, J. C., Povey, I. M., O'Regan, T. P. and Hurley, P. K. (2014) 'A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures', Journal of Applied Physics, 116(2), 024104 (8pp). doi: 10.1063/1.4887517 and may be found at http://aip.scitation.org/doi/10.1063/1.4887517