A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures

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dc.contributor.author Lin, Jun
dc.contributor.author Walsh, Lee A.
dc.contributor.author Hughes, Gregory
dc.contributor.author Woicik, Joseph C.
dc.contributor.author Povey, Ian M.
dc.contributor.author O'Regan, Terrance P.
dc.contributor.author Hurley, Paul K.
dc.date.accessioned 2017-09-20T10:06:32Z
dc.date.available 2017-09-20T10:06:32Z
dc.date.issued 2014
dc.identifier.citation Lin, J., Walsh, L., Hughes, G., Woicik, J. C., Povey, I. M., O'Regan, T. P. and Hurley, P. K. (2014) 'A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures', Journal of Applied Physics, 116(2), 024104 (8pp). doi: 10.1063/1.4887517 en
dc.identifier.volume 116
dc.identifier.issued 2
dc.identifier.startpage 1
dc.identifier.endpage 8
dc.identifier.issn 0021-8979
dc.identifier.issn 1089-7550
dc.identifier.uri http://hdl.handle.net/10468/4717
dc.identifier.doi 10.1063/1.4887517
dc.description.abstract Capacitance-Voltage (C-V) characterization and hard x-ray photoelectron spectroscopy (HAXPES) measurements have been used to study metal/Al2O3/In0.53Ga0.47As capacitor structures with high (Ni) and low (Al) work function metals. The HAXPES measurements observe a band bending occurring prior to metal deposition, which is attributed to a combination of fixed oxide charges and interface states of donor-type. Following metal deposition, the Fermi level positions at the Al2O3/In0.53Ga0.47As interface move towards the expected direction as observed from HAXPES measurements. The In0.53Ga0.47As surface Fermi level positions determined from both the C-V analysis at zero gate bias and HAXPES measurements are in reasonable agreement. The results are consistent with the presence of electrically active interface states at the Al2O3/In0.53Ga0.47As interface and suggest an interface state density increasing towards the In0.53Ga0.47As valence band edge. (C) 2014 AIP Publishing LLC. en
dc.description.sponsorship Basic Energy Sciences [DE-AC02-98CH10886] en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/10.1063/1.4887517
dc.rights © 2014 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Lin, J., Walsh, L., Hughes, G., Woicik, J. C., Povey, I. M., O'Regan, T. P. and Hurley, P. K. (2014) 'A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures', Journal of Applied Physics, 116(2), 024104 (8pp). doi: 10.1063/1.4887517 and may be found at http://aip.scitation.org/doi/10.1063/1.4887517 en
dc.subject Fermi levels en
dc.subject Ozone en
dc.subject III-V semiconductors en
dc.subject Nickel en
dc.subject Capacitance en
dc.title A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Jun Lin, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: Jun.lin@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder U.S. Department of Energy
dc.contributor.funder Office of Science
dc.contributor.funder Basic Energy Sciences
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress Jun.lin@tyndall.ie en
dc.identifier.articleid 24104
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/09/IN.1/I2633/IE/Investigating Emerging Non-Silicon Transistors (INVENT)/


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