Electron scattering mechanisms in fluorine-doped SnO2 thin films

Show simple item record

dc.contributor.author Rey, G.
dc.contributor.author Ternon, C.
dc.contributor.author Modreanu, Mircea
dc.contributor.author Mescot, X.
dc.contributor.author Consonni, V.
dc.contributor.author Bellet, D.
dc.date.accessioned 2017-09-20T10:06:32Z
dc.date.available 2017-09-20T10:06:32Z
dc.date.issued 2013
dc.identifier.citation Rey, G., Ternon, C., Modreanu, M., Mescot, X., Consonni, V. and Bellet, D. (2013) 'Electron scattering mechanisms in fluorine-doped SnO2 thin films', Journal of Applied Physics, 114(18), 183713 (9pp). doi: 10.1063/1.4829672 en
dc.identifier.volume 114
dc.identifier.issued 18
dc.identifier.startpage 1
dc.identifier.endpage 9
dc.identifier.issn 0021-8979
dc.identifier.issn 1089-7550
dc.identifier.uri http://hdl.handle.net/10468/4720
dc.identifier.doi 10.1063/1.4829672
dc.description.abstract Polycrystalline fluorine-doped SnO2 (FTO) thin films have been grown by ultrasonic spray pyrolysis on glass substrate. By varying growth conditions, several FTO specimens have been deposited and the study of their structural, electrical, and optical properties has been carried out. By systematically investigating the mobility as a function of carrier density, grain size, and crystallite size, the contribution of each physical mechanism involved in the electron scattering has been derived. A thorough comparison of experimental data and calculations allows to disentangle these different mechanisms and to deduce their relative importance. In particular, the roles of extended structural defects such as grain or twin boundaries as revealed by electron microscopy or x-ray diffraction along with ionized impurities are discussed. As a consequence, based on the quantitative analysis presented here, an experimental methodology leading to the improvement of the electro-optical properties of FTO thin films is reported. FTO thin films assuming an electrical resistivity as low as 3.7 center dot 10(-4)Omega cm (square sheet resistance of 8 Omega/square) while retaining good transmittance up to 86% (including substrate effect) in the visible range have been obtained. (c) 2013 AIP Publishing LLC. en
dc.description.sponsorship Agence Nationale de la Recherche [under the project "ASYSCOL") [ANR-08-HABISOL-002]; Association Instituts Carnot [ET Nano [10B792020A] en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/10.1063/1.4829672
dc.rights © 2013 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Rey, G., Ternon, C., Modreanu, M., Mescot, X., Consonni, V. and Bellet, D. (2013) 'Electron scattering mechanisms in fluorine-doped SnO2 thin films', Journal of Applied Physics, 114(18), 183713 (9pp). doi: 10.1063/1.4829672 and may be found at http://aip.scitation.org/doi/10.1063/1.4829672 en
dc.subject Electron scattering en
dc.subject Carrier mobility en
dc.subject Electron mobility en
dc.subject Grain boundaries en
dc.subject Doping en
dc.title Electron scattering mechanisms in fluorine-doped SnO2 thin films en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Mircea Modreanu, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: mircea.modreanu@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Agence Nationale de la Recherche
dc.contributor.funder Association Instituts Carnot
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress mircea.modreanu@tyndall.ie en
dc.identifier.articleid 183713


Files in this item

This item appears in the following Collection(s)

Show simple item record

This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement