Formation of contacts between doped carbon nanotubes and aluminum electrodes

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dc.contributor.author Jones, Sarah L. T.
dc.contributor.author Greer, James C.
dc.date.accessioned 2017-09-20T10:06:32Z
dc.date.available 2017-09-20T10:06:32Z
dc.date.issued 2013
dc.identifier.citation Jones, S. L. T. and Greer, J. C. (2013) 'Formation of contacts between doped carbon nanotubes and aluminum electrodes', Journal of Applied Physics, 114(15), 153709 (8pp). doi: 10.1063/1.4826262 en
dc.identifier.volume 114
dc.identifier.issued 15
dc.identifier.startpage 1
dc.identifier.endpage 8
dc.identifier.issn 0021-8979
dc.identifier.issn 1089-7550
dc.identifier.uri http://hdl.handle.net/10468/4721
dc.identifier.doi 10.1063/1.4826262
dc.description.abstract A theoretical study of the a semiconducting carbon nanotube (CNT) bonding to an aluminum electrode is presented using density functional theory to determine the electronic structure, and charge transport across the junction is studied using non-equilibrium Green's functions. The properties of CNT-metal junctions are of interest for optimizing metal-semiconductor junctions for Schottky barrier transistors and for the formation of Ohmic contacts for nanoelectronics. We first consider the properties of an undoped (16,0) CNT bonded to an aluminum electrode, including an analysis of metal induced gap states and examination of the surface dipole. The junction is then modified by introduction of substitutional dopants into the CNT using nitrogen and boron to form n- and p-type semiconductors, respectively, and the resulting impact of the doping on current transport across the junctions is calculated. As an alternative doping strategy, tetrathiafulvalene is introduced endohedrally and found to act as an n-type dopant in agreement with previous experimental studies. From electron transmission and current voltage characteristics, it is found that the doped junctions can be engineered to have much lower onset resistances relative to the undoped junction. It is found that the current-voltage characteristics display increased resistance for larger forward and reverse biases: For one polarity, the resistance increase is associated with the introduction of the CNT band gap into the voltage bias window, whereas for the opposing voltage polarity, the resistance increase is due to large charge carrier-substitutional dopant scattering. For the case of the endohedral doping scheme, it is found that the carrier-dopant scattering is effectively absent. (C) 2013 AIP Publishing LLC. en
dc.description.sponsorship Irish Research Council [EMBARK Postgraduate Scholarship] en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/10.1063/1.4826262
dc.rights © 2013 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Jones, S. L. T. and Greer, J. C. (2013) 'Formation of contacts between doped carbon nanotubes and aluminum electrodes', Journal of Applied Physics, 114(15), 153709 (8pp). doi: 10.1063/1.4826262 and may be found at http://aip.scitation.org/doi/10.1063/1.4826262 en
dc.subject Carbon nanotubes en
dc.subject Doping en
dc.subject Lead en
dc.subject Interface structure en
dc.subject Fermi levels en
dc.title Formation of contacts between doped carbon nanotubes and aluminum electrodes en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother James C. Greer, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: jim.greer@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder Irish Research Council
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress jim.greer@tyndall.ie en
dc.identifier.articleid 153709
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/06/IN.1/I857/IE/Semiconductor and Molecular Wire Simulation for Technology Design/


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