Chemical and electrical characterization of the HfO2/InAlAs interface

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dc.contributor.author Brennan, B.
dc.contributor.author Galatage, R. V.
dc.contributor.author Thomas, K.
dc.contributor.author Pelucchi, Emanuele
dc.contributor.author Hurley, Paul K.
dc.contributor.author Kim, J.
dc.contributor.author Hinkle, C. L.
dc.contributor.author Vogel, E. M.
dc.contributor.author Wallace, R. M.
dc.date.accessioned 2017-09-20T10:06:33Z
dc.date.available 2017-09-20T10:06:33Z
dc.date.issued 2013
dc.identifier.citation Brennan, B., Galatage, R. V., Thomas, K., Pelucchi, E., Hurley, P. K., Kim, J., Hinkle, C. L., Vogel, E. M. and Wallace, R. M. (2013) 'Chemical and electrical characterization of the HfO2/InAlAs interface', Journal of Applied Physics, 114(10), 104103 (8pp). doi: 10.1063/1.4821021 en
dc.identifier.volume 114
dc.identifier.issued 10
dc.identifier.endpage 8
dc.identifier.issn 0021-8979
dc.identifier.issn 1089-7550
dc.identifier.uri http://hdl.handle.net/10468/4724
dc.identifier.doi 10.1063/1.4821021
dc.description.abstract InAlAs has the potential to be used as a barrier layer in buried channel quantum well field effect transistor devices due to favorable lattice-matching and carrier confinement properties with InGaAs. Field effect device structures of this nature may also require a high-k oxide deposited on the InAlAs surface to reduce leakage current. This study investigates the impact of surface preparations and atomic layer deposition of HfO2 on these surfaces using x-ray photoelectron spectroscopy to analyse the chemical interactions taking place, as well as the electrical performance of associated capacitor devices. A large concentration of As related surface features is observed at the InAlAs surface, and is attributed to a large D-it response in electrical measurements. (C) 2013 AIP Publishing LLC. en
dc.description.sponsorship National Science Foundation [ECCS [0925844] en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/10.1063/1.4821021
dc.rights © 2013, AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Brennan, B., Galatage, R. V., Thomas, K., Pelucchi, E., Hurley, P. K., Kim, J., Hinkle, C. L., Vogel, E. M. and Wallace, R. M. (2013) 'Chemical and electrical characterization of the HfO2/InAlAs interface', Journal of Applied Physics, 114(10), 104103 (8pp). doi: 10.1063/1.4821021 and may be found at http://aip.scitation.org/doi/10.1063/1.4821021 en
dc.subject Surface states en
dc.subject Oxide surfaces en
dc.subject Surface treatments en
dc.subject Atomic layer deposition en
dc.subject X-ray photoelectron spectroscopy en
dc.title Chemical and electrical characterization of the HfO2/InAlAs interface en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Paul K. Hurley, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: paul.hurley@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Semiconductor Research Corporation
dc.contributor.funder National Science Foundation
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress paul.hurley@tyndall.ie en
dc.identifier.articleid 104103
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI US Ireland R&D Partnership/08/US/I1546/IE/Future Oxides and Channel Materials for Ultimate Scaling (FOCUS)/


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