Optical properties of hybrid quantum dot/quantum well active region based on GaAs system

Show simple item record

dc.contributor.author Thoma, Jiri
dc.contributor.author Ochalski, Tomasz J.
dc.contributor.author Hugues, Maxime
dc.contributor.author Zhang, Shiyong
dc.contributor.author Hegarty, Stephen P.
dc.contributor.author Huyet, Guillaume
dc.date.accessioned 2017-09-20T10:06:33Z
dc.date.available 2017-09-20T10:06:33Z
dc.date.issued 2012
dc.identifier.citation Thoma, J., Ochalski, T. J., Hugues, M., Zhang, S., Hegarty, S. P. and Huyet, G. (2012) 'Optical properties of hybrid quantum dot/quantum well active region based on GaAs system', Journal of Applied Physics, 112(6), 063103 (4pp). doi: 10.1063/1.4752279 en
dc.identifier.volume 112
dc.identifier.issued 6
dc.identifier.startpage 1
dc.identifier.endpage 4
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10468/4729
dc.identifier.doi 10.1063/1.4752279
dc.description.abstract We experimentally investigate the optical properties of a novel hybrid material/structure consisting of a GaInNAs quantum well and stacked InAs/InGaAs quantum dot layers on GaAs substrate. We demonstrate that the strong quantum confined Stark effect within the quantum well can effectively control well-dot detuning when reverse bias voltage is applied. With a combination of low-and room-temperature time resolved luminescence spectra we infer device absorption recovery time under 30 ps. These properties could be utilized in high-speed optoelectronics devices, in particular electro-absorption modulated lasers and reconfigurable multisection devices, where the hybrid quantum dots - quantum well material system could offer easily and rapidly interchangeable function, i.e., emission gain or variable attenuation, of each section depending on the external bias. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752279] en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/10.1063/1.4752279
dc.rights © 2012, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Thoma, J., Ochalski, T. J., Hugues, M., Zhang, S., Hegarty, S. P. and Huyet, G. (2012) 'Optical properties of hybrid quantum dot/quantum well active region based on GaAs system', Journal of Applied Physics, 112(6), 063103 (4pp). doi: 10.1063/1.4752279 and may be found at http://aip.scitation.org/doi/10.1063/1.4752279 en
dc.subject Quantum wells en
dc.subject Quantum dots en
dc.subject Photoluminescence en
dc.subject III-V semiconductors en
dc.subject Stark effect en
dc.title Optical properties of hybrid quantum dot/quantum well active region based on GaAs system en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Guillaume Huyet, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: guillaume.huyet@cit.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress guillaume.huyet@cit.ie en
dc.identifier.articleid 63103
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Strategic Research Cluster/07/SRC/I1173/IE/SRC PiFAS: Photonics - Integration From Atoms to Systems (PiFAS)/


Files in this item

This item appears in the following Collection(s)

Show simple item record

This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement