Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates

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dc.contributor.author O'Connor, Éamon
dc.contributor.author Cherkaoui, Karim
dc.contributor.author Monaghan, Scott
dc.contributor.author O'Connell, D.
dc.contributor.author Povey, Ian M.
dc.contributor.author Casey, P.
dc.contributor.author Newcomb, Simon B.
dc.contributor.author Gomeniuk, Yuri Y.
dc.contributor.author Provenzano, G.
dc.contributor.author Crupi, Felice
dc.contributor.author Hughes, Gregory
dc.contributor.author Hurley, Paul K.
dc.date.accessioned 2017-09-20T10:06:33Z
dc.date.available 2017-09-20T10:06:33Z
dc.date.issued 2012
dc.identifier.citation O’Connor, É., Cherkaoui, K., Monaghan, S., O’Connell, D., Povey, I., Casey, P., Newcomb, S. B., Gomeniuk, Y. Y., Provenzano, G., Crupi, F., Hughes, G. and Hurley, P. K. (2012) 'Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates', Journal of Applied Physics, 111(12), 124104 (7pp). doi: 10.1063/1.4729331 en
dc.identifier.volume 111
dc.identifier.issued 12
dc.identifier.startpage 1
dc.identifier.endpage 7
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10468/4730
dc.identifier.doi 10.1063/1.4729331
dc.description.abstract We report on experimental observations of room temperature low frequency capacitance-voltage (CV) behaviour in metal oxide semiconductor (MOS) capacitors incorporating high dielectric constant (high-k) gate oxides, measured at ac signal frequencies (2 kHz to 1 MHz), where a low frequency response is not typically expected for Si or GaAs MOS devices. An analysis of the inversion regions of the CV characteristics as a function of area and ac signal frequency for both n and p doped Si and GaAs substrates indicates that the source of the low frequency CV response is an inversion of the semiconductor/high-k interface in the peripheral regions outside the area defined by the metal gate electrode, which is caused by charge in the high-k oxide and/or residual charge on the high-k oxide surface. This effect is reported for MOS capacitors incorporating either MgO or GdSiOx as the high-k layers on Si and also for Al2O3 layers on GaAs(111B). In the case of NiSi/MgO/Si structures, a low frequency CV response is observed on the p-type devices, but is absent in the n-type devices, consistent with positive charge (>8 x 10(10) cm(-2)) on the MgO oxide surface. In the case of the TiN/GdSiOx/Si structures, the peripheral inversion effect is observed for n-type devices, in this case confirmed by the absence of such effects on the p-type devices. Finally, for the case of Au/Ni/Al2O3/GaAs(111B) structures, a low-frequency CV response is observed for n-type devices only, indicating that negative charge (> 3 x 10(12) cm(-2)) on the surface or in the bulk of the oxide is responsible for the peripheral inversion effect. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729331] en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/10.1063/1.4729331
dc.rights © 2012, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Connor, É., Cherkaoui, K., Monaghan, S., O’Connell, D., Povey, I., Casey, P., Newcomb, S. B., Gomeniuk, Y. Y., Provenzano, G., Crupi, F., Hughes, G. and Hurley, P. K. (2012) 'Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates', Journal of Applied Physics, 111(12), 124104 (7pp). doi: 10.1063/1.4729331 and may be found at http://aip.scitation.org/doi/10.1063/1.4729331 en
dc.subject III-V semiconductors en
dc.subject Oxide surfaces en
dc.subject Electrodes en
dc.subject Capacitors en
dc.subject Semiconductor device fabrication en
dc.title Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Paul K. Hurley, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: paul.hurley@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder FP7 Information and Communication Technologies
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress paul.hurley@tyndall.ie en
dc.identifier.articleid 124104
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/09/IN.1/I2633/IE/Investigating Emerging Non-Silicon Transistors (INVENT)/
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216171/EU/Silicon-based nanostructures and nanodevices for long term nanoelectronics applications/NANOSIL
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Short Term Travel Fellowship (STTF)/07/SRC/I1172 STTF 08/IE/SRC FORME: Functional Oxides and Related Materials for Electronics/


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