Influence of channel material properties on performance of nanowire transistors

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dc.contributor.author Razavi, Pedram
dc.contributor.author Fagas, Gíorgos
dc.contributor.author Ferain, Isabelle
dc.contributor.author Yu, Ran
dc.contributor.author Das, Samaresh
dc.contributor.author Colinge, Jean-Pierre
dc.date.accessioned 2017-09-20T10:06:33Z
dc.date.available 2017-09-20T10:06:33Z
dc.date.issued 2012
dc.identifier.citation Razavi, P., Fagas, G., Ferain, I., Yu, R., Das, S. and Colinge, J.-P. (2012) 'Influence of channel material properties on performance of nanowire transistors', Journal of Applied Physics, 111(12), 124509 (8pp). doi: 10.1063/1.4729777 en
dc.identifier.volume 111
dc.identifier.issued 12
dc.identifier.startpage 1
dc.identifier.endpage 8
dc.identifier.issn 0021-8979
dc.identifier.issn 1089-7550
dc.identifier.uri http://hdl.handle.net/10468/4731
dc.identifier.doi 10.1063/1.4729777
dc.description.abstract The performance of germanium and silicon inversion-mode and junctionless nanowire field-effect transistors are investigated using three-dimensional quantum mechanical simulations in the ballistic transport regime and within the framework of effective-mass theory for different channel materials and orientations. Our study shows that junctionless nanowire transistors made using n-type Ge or Si nanowires as a channel material are more immune to short-channel effects than conventional inversion-mode nanowire field-effect transistors. As a result, these transistors present smaller subthreshold swing, less drain-induced barrier-lowering, lower source-to-drain tunneling, and higher I-on/I-off ratio for the same technology node and low standby power technologies. We also show that the short-channel characteristics of Ge and Si junctionless nanowire transistors, unlike the inversion-mode nanowire transistors, are very similar. The results are explained through a detailed analysis on the effect of the channel crystallographic orientation, effective masses, and dielectric constant on electrical characteristics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729777] en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/10.1063/1.4729777
dc.rights © 2012, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Razavi, P., Fagas, G., Ferain, I., Yu, R., Das, S. and Colinge, J.-P. (2012) 'Influence of channel material properties on performance of nanowire transistors', Journal of Applied Physics, 111(12), 124509 (8pp). doi: 10.1063/1.4729777 and may be found at http://aip.scitation.org/doi/10.1063/1.4729777 en
dc.subject Elemental semiconductors en
dc.subject Nanowires en
dc.subject Germanium en
dc.subject Tunneling en
dc.subject Effective mass en
dc.title Influence of channel material properties on performance of nanowire transistors en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Gíorgos Fagas, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: georgios.fagas@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder European Commission
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress georgios.fagas@tyndall.ie en
dc.identifier.articleid 124509
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/05/IN/I888/IE/Advanced Scalable Silicon-on-Insulator Devices for Beyond-End-of-Roadmap Semiconductor Technology/
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/10/IN.1/I2992/IE/Semiconductor Nanowire Transistors (SENATOR)/
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/257111/EU/Silicon Quantum Wire Transistors/SQWIRE


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