Molecular dynamics simulation of the regrowth of nanometric multigate Si devices

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dc.contributor.author Marques, Luis A.
dc.contributor.author Pelaz, Lourdes
dc.contributor.author Santos, Ivan
dc.contributor.author Lopez, Pedro
dc.contributor.author Duffy, Ray
dc.date.accessioned 2017-09-20T10:06:34Z
dc.date.available 2017-09-20T10:06:34Z
dc.date.issued 2012
dc.identifier.citation Marqués, L. A., Pelaz, L., Santos, I., López, P. and Duffy, R. (2012) 'Molecular dynamics simulation of the regrowth of nanometric multigate Si devices', Journal of Applied Physics, 111(3), 034302 (6pp). doi: 10.1063/1.3679126 en
dc.identifier.volume 111
dc.identifier.issued 3
dc.identifier.startpage 1
dc.identifier.endpage 6
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10468/4732
dc.identifier.doi 10.1063/1.3679126
dc.description.abstract We use molecular dynamics (MD) simulation techniques to study the regrowth of nanometric multigate Si devices, such as fins and nanowires, surrounded by free surfaces and interfaces with amorphous material. Our results indicate that atoms in amorphous regions close to lateral free surfaces or interfaces rearrange at a slower rate compared to those in bulk due to the discontinuity of the lateral crystalline template. Consequently, the recrystallization front which advances faster in the device center than at the interfaces adopts new orientations. Regrowth then proceeds depending on the particular orientation of the new amorphous/crystal interfaces. In the particular case of (110) oriented fins, the new amorphous/crystal interfaces are aligned along the (111) direction, which produces frequent twining during further regrowth. Based on our simulation results, we propose alternatives to overcome this defected recrystallization in multigate structures: device orientation along (100) to prevent the formation of limiting {111} I amorphous/crystal interfaces and presence of a crystalline seed along the device body to favor regrowth perpendicular to the lateral surfaces/interfaces rather than parallel to them. (C) 2012 American Institute of Physics. [doi :10.1063/1.3679126] en
dc.description.sponsorship Ministerio de Ciencia e Innovación [TEC2008-06069] en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/10.1063/1.3679126
dc.rights © 2012, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Marqués, L. A., Pelaz, L., Santos, I., López, P. and Duffy, R. (2012) 'Molecular dynamics simulation of the regrowth of nanometric multigate Si devices', Journal of Applied Physics, 111(3), 034302 (6pp). doi: 10.1063/1.3679126 and may be found at http://aip.scitation.org/doi/10.1063/1.3679126 en
dc.subject Recrystallization en
dc.subject Crystal defects en
dc.subject Interface structure en
dc.subject Nanowires en
dc.subject Annealing en
dc.title Molecular dynamics simulation of the regrowth of nanometric multigate Si devices en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Ray Duffy, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: ray.duffy@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Ministerio de Ciencia e Innovación
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress ray.duffy@tyndall.ie en
dc.identifier.articleid 34302


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