Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures

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dc.contributor.author Marquardt, Oliver
dc.contributor.author Hickel, Tilmann
dc.contributor.author Neugebauer, Joerg
dc.contributor.author Gambaryan, Karen M.
dc.contributor.author Aroutiounian, Vladimir M.
dc.date.accessioned 2017-09-20T10:06:34Z
dc.date.available 2017-09-20T10:06:34Z
dc.date.issued 2011
dc.identifier.citation Marquardt, O., Hickel, T., Neugebauer, J., Gambaryan, K. M. and Aroutiounian, V. M. (2011) 'Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures', Journal of Applied Physics, 110(4), 043708 (6pp). doi: 10.1063/1.3624621 en
dc.identifier.volume 110
dc.identifier.issued 4
dc.identifier.startpage 1
dc.identifier.endpage 6
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10468/4734
dc.identifier.doi 10.1063/1.3624621
dc.description.abstract Quaternary III-V InAsSbP quantum dots (QDs) have been grown in the form of cooperative InAsSb/InAsP structures using a modified version of the liquid phase epitaxy. High resolution scanning electron microscopy, atomic force microscopy, and Fourier-transform infrared spectrometry were used to investigate these so-called nano-camomiles, mainly consisting of a central InAsSb QD surrounded by six InAsP-QDs, that shall be referred to as leaves in the following. The observed QDs average density ranges from 0.8 to 2 x 10(9) cm(-2), with heights and widths dimensions from 2 to 20 nm and 5 to 45 nm, respectively. The average density of the leaves is equal to (6-10) x 10(9) cm(-2) with dimensions of approx. 5 to 40 nm in width and depth. To achieve a first basic understanding of the electronic properties, we have modeled these novel nanostructures using second-order continuum elasticity theory and an eight-band k . p model to calculate the electronic structure. Our calculations found a clear localization of hole states in the central InAsSb dot. The localization of electron states, however, was found to be weak and might thus be easily influenced by external electric fields or strain. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3624621] en
dc.description.sponsorship International Science and Technology Center [A-1232] en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/10.1063/1.3624621
dc.rights © 2011, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Marquardt, O., Hickel, T., Neugebauer, J., Gambaryan, K. M. and Aroutiounian, V. M. (2011) 'Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures', Journal of Applied Physics, 110(4), 043708 (6pp). doi: 10.1063/1.3624621 and may be found at http://aip.scitation.org/doi/10.1063/1.3624621 en
dc.subject III-V semiconductors en
dc.subject Quantum dots en
dc.subject Nanostructures en
dc.subject Elasticity en
dc.subject Band gap en
dc.title Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Oliver Marquardt, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: oliver.marquardt@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder National Association for Armenian Studies and Research
dc.contributor.funder International Science and Technology Center
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress oliver.marquardt@tyndall.ie en
dc.identifier.articleid 43708


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