Low effective surface recombination in In(Ga)As/GaAs quantum dot diodes

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dc.contributor.author Tanriseven, Selim
dc.contributor.author Corbett, Brian M.
dc.date.accessioned 2017-09-20T10:06:34Z
dc.date.available 2017-09-20T10:06:34Z
dc.date.issued 2011
dc.identifier.citation Tanriseven, S. and Corbett, B. (2011) 'Low effective surface recombination in In(Ga)As/GaAs quantum dot diodes', Journal of Applied Physics, 110(3), 034508 (5pp). doi: 10.1063/1.3611387 en
dc.identifier.volume 110
dc.identifier.issued 3
dc.identifier.startpage 1
dc.identifier.endpage 5
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10468/4736
dc.identifier.doi 10.1063/1.3611387
dc.description.abstract Size dependent current-voltage measurements were performed on InGaAs quantum dot active region mesa diodes and the surface recombination velocity was extracted from current density versus perimeter/area plots using a diffusion model. An effective surface recombination value of 5.5 x 10(4) cm/s was obtained that can be reduced by more than an order of magnitude by selective oxidation of Al(0.9)Ga(0.1)As cladding layers. The values are three times smaller than those obtained for a single quantum well. The effect of p-type doping in the active region was investigated and found to increase the effective surface recombination. (C) 2011 American Institute of Physics. [doi:10.1063/1.3611387] en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/10.1063/1.3611387
dc.rights © 2011, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Tanriseven, S. and Corbett, B. (2011) 'Low effective surface recombination in In(Ga)As/GaAs quantum dot diodes', Journal of Applied Physics, 110(3), 034508 (5pp). doi: 10.1063/1.3611387 and may be found at http://aip.scitation.org/doi/10.1063/1.3611387 en
dc.subject Surface oxidation en
dc.subject Quantum dots en
dc.subject III-V semiconductors en
dc.subject Current density en
dc.subject Carrier density en
dc.title Low effective surface recombination in In(Ga)As/GaAs quantum dot diodes en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Brian Corbett, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: brian.corbett@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress brian.corbett@tyndall.ie en
dc.identifier.articleid 34508


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