Low effective surface recombination in In(Ga)As/GaAs quantum dot diodes
Loading...
Files
Published Version
Date
2011
Authors
Tanriseven, Selim
Corbett, Brian M.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
Size dependent current-voltage measurements were performed on InGaAs quantum dot active region mesa diodes and the surface recombination velocity was extracted from current density versus perimeter/area plots using a diffusion model. An effective surface recombination value of 5.5 x 10(4) cm/s was obtained that can be reduced by more than an order of magnitude by selective oxidation of Al(0.9)Ga(0.1)As cladding layers. The values are three times smaller than those obtained for a single quantum well. The effect of p-type doping in the active region was investigated and found to increase the effective surface recombination. (C) 2011 American Institute of Physics. [doi:10.1063/1.3611387]
Description
Keywords
Surface oxidation , Quantum dots , III-V semiconductors , Current density , Carrier density
Citation
Tanriseven, S. and Corbett, B. (2011) 'Low effective surface recombination in In(Ga)As/GaAs quantum dot diodes', Journal of Applied Physics, 110(3), 034508 (5pp). doi: 10.1063/1.3611387
Copyright
© 2011, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Tanriseven, S. and Corbett, B. (2011) 'Low effective surface recombination in In(Ga)As/GaAs quantum dot diodes', Journal of Applied Physics, 110(3), 034508 (5pp). doi: 10.1063/1.3611387 and may be found at http://aip.scitation.org/doi/10.1063/1.3611387