Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation

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dc.contributor.author Byun, Ki Yeol
dc.contributor.author Fleming, Peter G.
dc.contributor.author Bennett, Nick
dc.contributor.author Gity, Farzan
dc.contributor.author McNally, Patrick
dc.contributor.author Morris, Michael A.
dc.contributor.author Ferain, Isabelle
dc.contributor.author Colinge, Cindy
dc.date.accessioned 2017-09-20T10:06:34Z
dc.date.available 2017-09-20T10:06:34Z
dc.date.issued 2011
dc.identifier.citation Byun, K. Y., Fleming, P., Bennett, N., Gity, F., McNally, P., Morris, M., Ferain, I. and Colinge, C. (2011) 'Comprehensive investigation of Ge–Si bonded interfaces using oxygen radical activation', Journal of Applied Physics, 109(12), 123529 (5pp). doi: 10.1063/1.3601355 en
dc.identifier.volume 109
dc.identifier.issued 12
dc.identifier.startpage 1
dc.identifier.endpage 5
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10468/4737
dc.identifier.doi 10.1063/1.3601355
dc.description.abstract In this work, we investigate the directly bonded germanium-silicon interfaces to facilitate the development of high quality germanium silicon hetero integration at the wafer scale. X-ray photoelectron spectroscopy data is presented which provides the chemical composition of the germanium surfaces as a function of the hydrophilic bonding reaction at the interface. The bonding process induced long range deformation is detected by synchrotron x-ray topography. The hetero-interface is characterized by measuring forward and reverse current, and by high resolution transmission electron microscopy. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3601355] en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/10.1063/1.3601355
dc.rights © 2011, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Byun, K. Y., Fleming, P., Bennett, N., Gity, F., McNally, P., Morris, M., Ferain, I. and Colinge, C. (2011) 'Comprehensive investigation of Ge–Si bonded interfaces using oxygen radical activation', Journal of Applied Physics, 109(12), 123529 (5pp). doi: 10.1063/1.3601355 and may be found at http://aip.scitation.org/doi/10.1063/1.3601355 en
dc.subject Germanium en
dc.subject Elemental semiconductors en
dc.subject Interface structure en
dc.subject Surface oxidation en
dc.subject Annealing en
dc.title Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Farzan Gity, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: farzan.gity@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress farzan.gity @tyndall.ie en
dc.identifier.articleid 123529
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/07/IN.1/I937/IE/Low Temperature Direct Bonding for Heterogeneous Integration/


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