Built-in field control in alloyed c-plane III-N quantum dots and wells

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dc.contributor.author Caro, Miguel A.
dc.contributor.author Schulz, Stefan
dc.contributor.author Healy, S. B.
dc.contributor.author O'Reilly, Eoin P.
dc.date.accessioned 2017-09-20T10:06:34Z
dc.date.available 2017-09-20T10:06:34Z
dc.date.issued 2011
dc.identifier.citation Caro, M. A., Schulz, S., Healy, S. B. and O’Reilly, E. P. (2011) 'Built-in field control in alloyed c-plane III-N quantum dots and wells', Journal of Applied Physics, 109(8), 084110 (10pp). doi: 10.1063/1.3563568 en
dc.identifier.volume 109
dc.identifier.issued 8
dc.identifier.startpage 1
dc.identifier.endpage 10
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10468/4739
dc.identifier.doi 10.1063/1.3563568
dc.description.abstract We investigate the degree to which the built-in electric field can be suppressed by employing polarization-matched barriers in III-N quantum well and dot structures grown along the c axis. Our results show that it is possible to take advantage of the opposite contributions to the built-in potential arising from the different possible combinations of wurtzite GaN, InN, and AlN when alloying the materials. We show that, for a fixed bandgap of the dot/well, optimal alloy compositions can be found that minimize the built-in field across the structure. We discuss and study the impact of different material parameters on the results, including the influence of nonlinear effects in the piezoelectric polarization. Structures grown with unstrained barriers and on GaN epilayers are considered, including discussion of the effects of constraints such as strain limits and alloy miscibility. (C) 2011 American Institute of Physics. [doi:10.1063/1.3563568] en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/10.1063/1.3563568
dc.rights © 2011, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Caro, M. A., Schulz, S., Healy, S. B. and O’Reilly, E. P. (2011) 'Built-in field control in alloyed c-plane III-N quantum dots and wells', Journal of Applied Physics, 109(8), 084110 (10pp). doi: 10.1063/1.3563568 and may be found at http://aip.scitation.org/doi/10.1063/1.3563568 en
dc.subject Quantum dots en
dc.subject Quantum wells en
dc.subject Band gap en
dc.subject III-V semiconductors en
dc.subject Polarization en
dc.title Built-in field control in alloyed c-plane III-N quantum dots and wells en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Miguel A. Caro, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: mcaroba@gmail.com en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder Irish Research Council for Science, Engineering and Technology
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress mcaroba@gmail.com en
dc.identifier.articleid 84110


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