A systematic study of (NH4)(2)S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers

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dc.contributor.author O'Connor, Éamon
dc.contributor.author Brennan, B.
dc.contributor.author Djara, Vladimir
dc.contributor.author Cherkaoui, Karim
dc.contributor.author Monaghan, Scott
dc.contributor.author Newcomb, Simon B.
dc.contributor.author Contreras, R.
dc.contributor.author Milojevic, M.
dc.contributor.author Hughes, Gregory
dc.contributor.author Pemble, Martyn E.
dc.contributor.author Wallace, R. M.
dc.contributor.author Hurley, Paul K.
dc.date.accessioned 2017-09-20T10:06:34Z
dc.date.available 2017-09-20T10:06:34Z
dc.date.issued 2011
dc.identifier.citation O’Connor, É., Brennan, B., Djara, V., Cherkaoui, K., Monaghan, S., Newcomb, S. B., Contreras, R., Milojevic, M., Hughes, G., Pemble, M. E., Wallace, R. M. and Hurley, P. K. (2011) 'A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers', Journal of Applied Physics, 109(2), 024101 (10pp). doi: 10.1063/1.3533959 en
dc.identifier.volume 109
dc.identifier.issued 2
dc.identifier.startpage 1
dc.identifier.endpage 10
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10468/4740
dc.identifier.doi 10.1063/1.3533959
dc.description.abstract In this work, we present the results of an investigation into the effectiveness of varying ammonium sulphide (NH4)(2)S concentrations in the passivation of n-type and p-type In0.53Ga0.47As. Samples were degreased and immersed in aqueous (NH4)(2)S solutions of concentrations 22%, 10%, 5%, or 1% for 20 min at 295 K, immediately prior to atomic layer deposition of Al2O3. Multi-frequency capacitance-voltage (C-V) results on capacitor structures indicate that the lowest frequency dispersion over the bias range examined occurs for n-type and p-type devices treated with the 10% (NH4)(2)S solution. The deleterious effect on device behavior of increased ambient exposure time after removal from 10% (NH4)(2)S solution is also presented. Estimations of the interface state defect density (D-it) for the optimum 10% (NH4)(2)S passivated In0.53Ga0.47As devices extracted using an approximation to the conductance method, and also extracted using the temperature-modified high-low frequency C-V method, indicate that the same defect is present over n-type and p-type devices having an integrated D-it of similar to 2.5 x 10(12) cm(-2) (+/- 1 x 10(12) cm(-2)) with the peak density positioned in the middle of the In0.53Ga0.47As band gap at approximately 0.37 eV (+/- 0.03 eV) from the valence band edge. Both methods used for extracting D-it show very good agreement, providing evidence to support that the conductance method can be applied to devices incorporating high-k oxides on In0.53Ga0.47As. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3533959] en
dc.description.sponsorship National Science Foundation [NSF-ECCS-0925844] en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/10.1063/1.3533959
dc.rights © 2011, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Connor, É., Brennan, B., Djara, V., Cherkaoui, K., Monaghan, S., Newcomb, S. B., Contreras, R., Milojevic, M., Hughes, G., Pemble, M. E., Wallace, R. M. and Hurley, P. K. (2011) 'A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers', Journal of Applied Physics, 109(2), 024101 (10pp). doi: 10.1063/1.3533959 and may be found at http://aip.scitation.org/doi/10.1063/1.3533959 en
dc.subject Capacitance en
dc.subject Ozone en
dc.subject Passivation en
dc.subject Atomic layer deposition en
dc.subject X-ray photoelectron spectroscopy en
dc.title A systematic study of (NH4)(2)S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Éamon O'Connor, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: eamon.oconnor@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder National Science Foundation
dc.contributor.funder Semiconductor Research Corporation
dc.contributor.funder Seventh Framework Programme
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress eamon.oconnor@tyndall.ie en
dc.identifier.articleid 24101
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216171/EU/Silicon-based nanostructures and nanodevices for long term nanoelectronics applications/NANOSIL
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Strategic Research Cluster/07/SRC/I1172/IE/SRC FORME: Functional Oxides and Related Materials for Electronics/


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