Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistors

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dc.contributor.author Akhavan, Nima Dehdashti
dc.contributor.author Afzalian, Aryan
dc.contributor.author Lee, Chi-Woo
dc.contributor.author Yan, Ran
dc.contributor.author Ferain, Isabelle
dc.contributor.author Razavi, Pedram
dc.contributor.author Yu, Ran
dc.contributor.author Fagas, Gíorgos
dc.contributor.author Colinge, Jean-Pierre
dc.date.accessioned 2017-09-20T10:06:35Z
dc.date.available 2017-09-20T10:06:35Z
dc.date.issued 2010
dc.identifier.citation Akhavan, N. D., Afzalian, A., Lee, C.-W., Yan, R., Ferain, I., Razavi, P., Yu, R., Fagas, G. and Colinge, J.-P. (2010) 'Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistors', Journal of Applied Physics, 108(3), 034510 (8pp). doi: 10.1063/1.3457848 en
dc.identifier.volume 108
dc.identifier.issued 3
dc.identifier.startpage 1
dc.identifier.endpage 8
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10468/4744
dc.identifier.doi 10.1063/1.3457848
dc.description.abstract In this paper we investigate the effects of intravalley acoustic phonon scattering on the quantum transport and on the electrical characteristics of multigate silicon nanowire metal-oxide-semiconductor field-effect transistors. We show that acoustic phonons cause a shift and broadening of the local DOS in the nanowire, which modifies the electrical characteristics of the device. The influence of scattering on off-state and on-state currents is investigated for different values of channel length. In the ballistic transport regime, source-to-drain tunneling current is predominant, whereas in the presence of acoustic phonons, diffusion becomes the dominant current transport mechanism. A three-dimensional quantum mechanical device simulator based on the nonequilibrium Green's function formalism in uncoupled-mode space has been developed to extract device parameters in the presence of electron-phonon interactions. Electron-phonon scattering is accounted for by adopting the self-consistent Born approximation and using the deformation potential theory. (C) 2010 American Institute of Physics. (doi: 10.1063/1.3457848) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/10.1063/1.3457848
dc.rights © 2010, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Akhavan, N. D., Afzalian, A., Lee, C.-W., Yan, R., Ferain, I., Razavi, P., Yu, R., Fagas, G. and Colinge, J.-P. (2010) 'Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistors', Journal of Applied Physics, 108(3), 034510 (8pp). doi: 10.1063/1.3457848 and may be found at http://aip.scitation.org/doi/10.1063/1.3457848 en
dc.subject Ballistic transport en
dc.subject Nanowires en
dc.subject Electron scattering en
dc.subject Phonons en
dc.subject Silicon en
dc.title Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistors en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Gíorgos Fagas, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: georgios.fagas@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder European Commission
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress georgios.fagas@tyndall.ie en
dc.identifier.articleid 34510
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216373/EU/European platform for low-power applications on Silicon-on-Insulator Technology/EUROSOI+
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216171/EU/Silicon-based nanostructures and nanodevices for long term nanoelectronics applications/NANOSIL
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/05/IN/I888/IE/Advanced Scalable Silicon-on-Insulator Devices for Beyond-End-of-Roadmap Semiconductor Technology/


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