Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition

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dc.contributor.author Long, Rathnait D.
dc.contributor.author O'Connor, Éamon
dc.contributor.author Newcomb, Simon B.
dc.contributor.author Monaghan, Scott
dc.contributor.author Cherkaoui, Karim
dc.contributor.author Casey, P.
dc.contributor.author Hughes, Gregory
dc.contributor.author Thomas, Kevin K.
dc.contributor.author Chalvet, Francis N.
dc.contributor.author Povey, Ian M.
dc.contributor.author Pemble, Martyn E.
dc.contributor.author Hurley, Paul K.
dc.date.accessioned 2017-09-20T10:06:35Z
dc.date.available 2017-09-20T10:06:35Z
dc.date.issued 2009
dc.identifier.citation Long, R. D., O’Connor, É., Newcomb, S. B., Monaghan, S., Cherkaoui, K., Casey, P., Hughes, G., Thomas, K. K., Chalvet, F., Povey, I. M., Pemble, M. E. and Hurley, P. K. (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition', Journal of Applied Physics, 106(8), 084508 (7pp). doi: 10.1063/1.3243234 en
dc.identifier.volume 106
dc.identifier.issued 8
dc.identifier.startpage 1
dc.identifier.endpage 7
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10468/4750
dc.identifier.doi 10.1063/1.3243234
dc.description.abstract In this work results are presented on the structural analysis, chemical composition, and interface state densities of HfO2 thin films deposited by atomic layer deposition (ALD) from Hf[N(CH3)(2)](4) and H2O on In0.53Ga0.47As/InP substrates. The structural and chemical properties are investigated using high resolution cross-sectional transmission electron microscopy and electron energy loss spectroscopy. HfO2 films (3-15 nm) deposited on In0.53Ga0.47As are studied following a range of surface treatments including in situ treatment of the In0.53Ga0.47As surface by H2S exposure at 50-350 degrees C immediately following the metal organic vapor phase epitaxy growth of the In0.53Ga0.47As layer, ex situ treatment with (NH4)(2)S, and deposition on the native oxides of In0.53Ga0.47As with no surface treatment. The structural analysis indicates that the In0.53Ga0.47As surface preparation prior to HfO2 film deposition influences the thickness of the HfO2 film and the interlayer oxide. The complete interfacial self-cleaning of the In(0.53)Gas(0.47)As native oxides is not observed using an ALD process based on the Hf[N(CH3)(2)](4) precursor and H2O. Elemental profiling of the HfO2/In0.53Ga0.47As interface region by electron energy loss spectroscopy reveals an interface oxide layer of 1-2 nm in thickness, which consists primarily of Ga oxides. Using a conductance method approximation, peak interface state densities in the range from 6 x 10(12) to 2 x 10(13) cm(-2) eV(-1) are estimated depending on the surface preparation. (C) 2009 American Institute of Physics. [doi:10.1063/1.3243234] en
dc.description.sponsorship Irish Research Council for Science, Engineering, and Technology; Science Foundation Ireland [05/IN/1751] en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/10.1063/1.3243234
dc.rights © 2009, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Long, R. D., O’Connor, É., Newcomb, S. B., Monaghan, S., Cherkaoui, K., Casey, P., Hughes, G., Thomas, K. K., Chalvet, F., Povey, I. M., Pemble, M. E. and Hurley, P. K. (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition', Journal of Applied Physics, 106(8), 084508 (7pp). doi: 10.1063/1.3243234 and may be found at http://aip.scitation.org/doi/10.1063/1.3243234 en
dc.subject Atomic layer deposition en
dc.subject Transmission electron microscopy en
dc.subject Interface structure en
dc.subject III-V semiconductors en
dc.subject Electron energy loss spectroscopy en
dc.title Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Rathnait Long, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: rathnait.long@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder Irish Research Council for Science, Engineering and Technology
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress rathnait.long@tyndall.ie en
dc.identifier.articleid 84508


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