Interface chemistry of contact metals and ferromagnets on the topological insulator Bi2Se3

Show simple item record Walsh, Lee A. Smyth, Christopher M. Barton, Adam T. Wang, Qingxiao Che, Zifan Yue, Ruoyu Kim, Jiyoung Kim, Moon J. Wallace, Robert M. Hinkle, Christopher L. 2017-10-09T11:58:33Z 2017-10-09T11:58:33Z 2017-10-02
dc.identifier.citation Walsh, L. A., Smyth, C. M., Barton, A. T., Wang, Q., Che, Z., Yue, R., Kim, J., Kim, M. J., Wallace, R. M. and Hinkle, C. L. (2017) 'Interface Chemistry of Contact Metals and Ferromagnets on the Topological Insulator Bi2Se3', The Journal of Physical Chemistry C. In Press. doi: 10.1021/acs.jpcc.7b08480 en
dc.identifier.startpage 1 en
dc.identifier.endpage 62 en
dc.identifier.issn 1932-7447
dc.identifier.doi 10.1021/acs.jpcc.7b08480
dc.description.abstract The interface between the topological insulator Bi2Se3 and deposited metal films is investigated using x-ray photoelectron spectroscopy including conventional contact metals (Au, Pd, Cr, and Ir) and magnetic materials (Co, Fe, Ni, Co0.8Fe0.2, and Ni0.8Fe0.2). Au is the only metal to show little or no interaction with the Bi2Se3, with no interfacial layer between the metal and the surface of the TI. The other metals show a range of reaction behaviors with the relative strength of reaction (obtained from the amount of Bi2Se3 consumed during reaction) ordered as: Au < Pd < Ir < Co ≤ CoFe < Ni < Cr < NiFe < Fe, in approximate agreement with the behavior expected from the Gibbs free energies of formation for the alloys formed. Post metallization anneals at 300°C in vacuum were also performed for each interface. Several of the metal films were not stable upon anneal and desorbed from the surface (Au, Pd, Ni, and Ni0.8Fe0.2), while Cr, Fe, Co, and Co0.8Fe0.2 showed accelerated reactions with the underlying Bi2Se3, including inter-diffusion between the metal and Se. Ir was the only metal to remain stable following anneal, showing no significant increase in reaction with the Bi2Se3. This study reveals the nature of the metal-Bi2Se3 interface for a range of metals. The reactions observed must be considered when designing Bi2Se3 based devices. en
dc.description.sponsorship National Institute of Standards and Technology and Semiconductor Research Corporation (the SWAN Center,South West Academy of Nanoelectronics); National Science Foundation (NSF Award No. 1407765 under the US/Ireland UNITE collaboration) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Chemical Society en
dc.rights © American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appears in final form in Journal of Physical Chemistry C, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see en
dc.subject X-ray photoelectron spectroscopy en
dc.subject Topological insulator en
dc.subject Deposited metal film en
dc.subject Crystal en
dc.title Interface chemistry of contact metals and ferromagnets on the topological insulator Bi2Se3 en
dc.type Article (peer-reviewed) en
dc.internal.authorurl Lee A. Walsh, Tyndall National Institute, University College Cork, Cork, Ireland +353 21 490 3000, Email: en
dc.internal.availability Full text available en Access to this article is restricted for 12 months after publication by request of the publisher. en 2018-10-02
dc.description.version Accepted Version en
dc.contributor.funder National Institute of Standards and Technology en
dc.contributor.funder National Science Foundation en
dc.contributor.funder Horizon 2020 en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Semiconductor Research Corporation en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Physical Chemistry C en
dc.relation.project info:eu-repo/grantAgreement/EC/H2020::MSCA-COFUND-FP/713567/EU/Cutting Edge Training - Cutting Edge Technology/EDGE en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2278/IE/Advanced Materials and BioEngineering Research Centre (AMBER)/ en

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