Scattering of carriers by coupled plasmon-phonon modes in bulk polar semiconductors and polar semiconductor heterostructures

Show simple item record Fahy, Stephen B. Hauber, Anna 2017-11-06T16:24:20Z 2017-11-06T16:24:20Z 2017-01-25
dc.identifier.citation Hauber, A. and Fahy, S. (2017) 'Scattering of carriers by coupled plasmon-phonon modes in bulk polar semiconductors and polar semiconductor heterostructures', Physical Review B, 95(4), 045210 (29pp). doi:10.1103/PhysRevB.95.045210 en
dc.identifier.volume 95 en
dc.identifier.issued 4 en
dc.identifier.startpage 045210-1 en
dc.identifier.endpage 045210-29 en
dc.identifier.issn 2469-9950
dc.identifier.doi 10.1103/PhysRevB.95.045210
dc.description.abstract We present a general treatment of carrier scattering by coupled phonon-plasmon collective modes in polar semiconductors, taking anharmonic phonon decay into account and self-consistently calculating carrier momentum relaxation rates and carrier mobility in a parabolic band model. We iteratively solve the weak-field Boltzmann equations for carriers and collective modes and obtain their nonequilibrium distribution functions. Both the scattering rates and the anharmonic decay of the coupled modes are expressed through the total dielectric function of the semiconductor, consisting of a damped lattice dielectric function, and a temperature dependent random phase approximation dielectric function for the carrier plasma. We show that the decay of the coupled modes has a significant effect on the contribution to the mobility limited by carrier-coupled mode scattering. We also propose a scalar quantity, the phonon dissipation weight factor, with which this effect can be estimated from an analytic expression. We apply this treatment to dynamically screened electron-longitudinal optical phonon scattering in bulk polar semiconductors, and to dynamically screened remote phonon scattering in polar heterostructures where monolayers of MoS2 are sandwiched between various polar dielectrics. We find that a dynamic treatment of the remote phonon scattering yields mobilities up to 75% higher than a static screening approximation does for structures which consist of a monolayer of MoS2 between hafnia and silica. Moreover, we show that accounting for the nonzero thickness of the MoS2 interface layer has an important effect on the calculated mobility in the same structure. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Physical Society en
dc.rights © 2017 American Physical Society en
dc.subject Dielectric properties en
dc.subject Permittivity en
dc.subject Plasmons en
dc.subject Transport properties en
dc.subject Crystal structures en
dc.subject Dielectrics en
dc.subject Doped semiconductors en
dc.subject II-VI semiconductors en
dc.subject III-V semiconductors en
dc.subject Semiconducting systems en
dc.subject Approximation methods for many-body systems en
dc.subject Boltzmann theory en
dc.subject Methods in transport en
dc.subject Random phase approximation en
dc.subject Semiclassical methods en
dc.title Scattering of carriers by coupled plasmon-phonon modes in bulk polar semiconductors and polar semiconductor heterostructures en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Stephen B. Fahy, Physics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en 2017-11-06T16:15:03Z
dc.description.version Published Version en
dc.internal.rssid 406321679
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Physical Review B en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/12/IA/1601/IE/Ultrafast energy dissipation in semimetals and semiconductors: Simulation based on first-principles electronic structure theory/ en

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