Rhenium-doped MoS2 films
Hallam, Toby; Monaghan, Scott; Gity, Farzan; Ansari, Lida; Schmidt, Michael; Downing, Clive; Cullen, Conor P.; Nicolosi, Valeria; Hurley, Paul K.; Duesberg, Georg S.
Date:
2017-11-14
Copyright:
© 2017, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters 2017 111:20 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4995220
Full text restriction information:
Access to this article is restricted until 12 months after publication by request of the publisher.
Restriction lift date:
2018-11-14
Citation:
Hallam, T., Monaghan, S., Gity, F., Ansari, L., Schmidt, M., Downing, C., Cullen, C. P., Nicolosi, V., Hurley, P. K. and Duesberg, G. S. (2017) 'Rhenium-doped MoS2 films', Applied Physics Letters, 111(20), 203101 (5 pp). doi: 10.1063/1.4995220
Abstract:
Tailoring the electrical properties of transition metal dichalcogenides by doping is one of the biggest challenges for the application of 2D materials in future electronic devices. Here, we report on a straightforward approach to the n-type doping of molybdenum disulfide (MoS2) films with rhenium (Re). High-Resolution Scanning Transmission Electron Microscopy and Energy-Dispersive X-ray spectroscopy are used to identify Re in interstitial and lattice sites of the MoS2 structure. Hall-effect measurements confirm the electron donating influence of Re in MoS2, while the nominally undoped films exhibit a net p-type doping. Density functional theory (DFT) modelling indicates that Re on Mo sites is the origin of the n-type doping, whereas S-vacancies have a p-type nature, providing an explanation for the p-type behaviour of nominally undoped MoS2 films.
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