Comparison of InGaAs and InAlAs sacrificial layers for release of InP-based devices

Show simple item record O'Callaghan, James Loi, Ruggero Mura, Enrica E. Roycroft, Brendan Trindade, António José Thomas, Kevin K. Gocalińska, Agnieszka M. Pelucchi, Emanuele Zhang, J. Roelkens, G. Bower, Christopher A. Corbett, Brian M. 2017-11-30T12:38:23Z 2017-11-30T12:38:23Z 2017-12-01
dc.identifier.citation O'Callaghan, J., Loi, R., Mura, E. E., Roycroft, B., Trindade, A. J., Thomas, K., Gocalinska, A., Pelucchi, E., Zhang, J.; Roelkens, G.; Bower, C. A. and Corbett, B. (2017) 'Comparison of InGaAs and InAlAs sacrificial layers for release of InP-based devices', Optical Materials Express, 7(12), pp.4408-4414. doi:10.1364/OME.7.004408 en
dc.identifier.volume 7 en
dc.identifier.issued 12 en
dc.identifier.startpage 4408 en
dc.identifier.endpage 4414 en
dc.identifier.issn 2159-3930
dc.identifier.doi 10.1364/OME.7.004408
dc.description.abstract Heterogeneous integration of InP devices to Si substrates by adhesive-less micro transfer printing requires flat surfaces for optimum attachment and thermal sinking. InGaAs and InAlAs sacrificial layers are compared for the selective undercut of InP coupons by FeCl3:H2O (1:2). InAlAs offers isotropic etches and superior selectivity (> 4,000) to InP when compared with InGaAs. A 500 nm thick InAlAs sacrificial layer allows the release of wide coupons with a surface roughness < 2 nm and a flatness < 20 nm. The InAlAs release technology is applied to the transfer printing of a pre-fabricated InP laser to a Si substrate. en
dc.description.sponsorship Science Foundation Ireland (15/IA/2864); Horizon 2020 (Research and Innovation Programme 45314 (TOP-HIT)) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Optical Society of America en
dc.rights © 2017, Optical Society of America under the terms of the OSA Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved. en
dc.subject Integrated optics materials en
dc.subject Subsystem integration and techniques en
dc.title Comparison of InGaAs and InAlAs sacrificial layers for release of InP-based devices en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Ruggero Loi, Tyndall Photonics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en 2017-11-29T10:04:56Z
dc.description.version Published Version en
dc.internal.rssid 419811945
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Horizon 2020 en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Optical Materials Express en
dc.internal.copyrightchecked Yes en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/ en

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