Ultra-high-density arrays of defect-free AlN nanorods: a "space-filling" approach

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dc.contributor.author Conroy, Michele
dc.contributor.author Zubialevich, Vitaly Z.
dc.contributor.author Li, Haoning
dc.contributor.author Petkov, Nikolay
dc.contributor.author O'Donoghue, Sally
dc.contributor.author Holmes, Justin D.
dc.contributor.author Parbrook, Peter J.
dc.date.accessioned 2018-01-26T15:17:44Z
dc.date.available 2018-01-26T15:17:44Z
dc.date.issued 2015-11-24
dc.identifier.citation Conroy, M., Zubialevich, V. Z., Li, H., Petkov, N., O’Donoghue, S., Holmes, J. D. and Parbrook, P. J. (2016) 'Ultra-High-Density Arrays of Defect-Free AlN Nanorods: A “Space-Filling” Approach', ACS Nano, 10(2), pp. 1988-1994. doi:10.1021/acsnano.5b06062 en
dc.identifier.volume 10 en
dc.identifier.issued 2 en
dc.identifier.startpage 1988 en
dc.identifier.endpage 1994 en
dc.identifier.issn 1936-0851
dc.identifier.uri http://hdl.handle.net/10468/5334
dc.identifier.doi 10.1021/acsnano.5b06062
dc.description.abstract Nanostructured semiconductors have a clear potential for improved optoelectronic devices, such as high-efficiency light-emitting diodes (LEDs). However, most arrays of semiconductor nanorods suffer from having relatively low densities (or “fill factors”) and a high degree of nonuniformity, especially when produced by self-organized growth. Ideally an array of nanorods for an optoelectronic emitter should have a fill factor close to 100%, with uniform rod diameter and height. In this article we present a “space-filling” approach for forming defect-free arrays of AlN nanorods, whereby the separation between each rod can be controlled to 5 nm due to a self-limiting process. These arrays of pyramidal-topped AlN nanorods formed over wafer-scale areas by metal organic chemical vapor deposition provide a defect-free semipolar top surface, for potential optoelectronic device applications with the highest reported fill factor at 98%. en
dc.description.sponsorship Higher Education Authority ((Programme for Research in Third Level Institutions Cycles 4 and 5 via the INSPIRE and TYFFANI projects), (Irish Government’s Programme for Research in Third Level Institutions Cycle 5, National Development Plan 2007−2013, with the assistance of the European Regional Development Fund)) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Chemical Society en
dc.rights © 2015 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsnano.5b06062 en
dc.subject Aluminum nitride en
dc.subject Growth mechanism en
dc.subject III-nitrides en
dc.subject Nanorods en
dc.subject Nanowires en
dc.title Ultra-high-density arrays of defect-free AlN nanorods: a "space-filling" approach en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-01-26T14:59:03Z
dc.description.version Accepted Version en
dc.internal.rssid 423320067
dc.contributor.funder Higher Education Authority en
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle ACS Nano en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/10/IN.1/I2993/IE/Advanced Ultraviolet Emitters from InAlN Based Alloy Structures/ en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Stokes Professorship & Lectureship Programme/07/EN/E001A/IE/Peter Parbrook/ en

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