Characterization of GaN-based light-emitting diodes

Show simple item record

dc.contributor.advisor Corbett, Brian en
dc.contributor.advisor Maaskant, Pleun en Antuna-Presa, Silvino Jose 2018-02-07T12:47:43Z 2018-02-07T12:47:43Z 2016 2016
dc.identifier.citation Antuna-Presa, S. J. 2016. TitCharacterization of GaN-based light-emitting diodes. PhD Thesis, University College Cork. en
dc.description.abstract Maximizing the performance of light-emitting diodes (LEDs) is essential for the widespread uptake of solid-state lighting. To contribute towards this goal, this thesis focuses on the electrical and optical characterization of InGaN/GaN-based multi quantum well LEDs. In this work a wide range of characterization methodologies are introduced. A new development is the study of the emission spectra under resonant optical pumping and varying electrical bias. This has proven to be useful to obtain insights into the carrier dynamics and is used here to investigate LED samples containing different numbers of quantum wells (QWs) with different thicknesses for the barriers. Despite having only small structural differences, these samples have shown strong differences in their performance, which are attributed to a stronger piezoelectric field in the QWs in the sample with thinner barriers. Fluorescence microscopy with selective excitation of the QWs also allows the study of the spatially dependent luminescent properties of LEDs. In this case ohmic contacts create an equipotential surface and influence the collective emission. Strong carrier escape is observed in photovoltaic mode under both open and short circuit conditions. To help identify the underlying recombination mechanisms, different voltage ideality factors are extracted and compared with each other. This thesis shows that the use of photovoltaic measurements together with biasdependent spectrally resolved luminescence is a powerful tool to investigate GaN LEDs. The methodologies presented here provide experimental tools to better understand carrier recombination processes in different LED samples. These methods can extended to samples grown on different crystallographic orientations or to study the effects of additional layers in novel LED structures. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher University College Cork en
dc.rights © 2016, Silvino Jose Antuna-Presa. en
dc.rights.uri en
dc.subject Light emitting diodes en
dc.subject Electroluminescence en
dc.subject Fluorescence en
dc.subject Optical resonant luminescence en
dc.subject Gallium nitride en
dc.subject Piezoelectric fields en
dc.title Characterization of GaN-based light-emitting diodes en
dc.type Doctoral thesis en
dc.type.qualificationlevel Doctoral en
dc.type.qualificationname PhD (Science) en
dc.internal.availability Full text available en No embargo required en
dc.description.version Accepted Version
dc.contributor.funder Seventh Framework Programme en
dc.contributor.funder Science Foundation Ireland en
dc.description.status Not peer reviewed en Tyndall National Institute en
dc.check.type No Embargo Required
dc.check.reason No embargo required en
dc.check.opt-out No en
dc.thesis.opt-out false
dc.check.embargoformat Not applicable en
dc.internal.conferring Autumn 2017 en
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::NMP/280587/EU/AlGaInN materials on semi-polar templates for yellow emission in solid state lighting applications/ALIGHT en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/ en

Files in this item

This item appears in the following Collection(s)

Show simple item record

© 2016, Silvino Jose Antuna-Presa. Except where otherwise noted, this item's license is described as © 2016, Silvino Jose Antuna-Presa.
This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement