Mind the drain from strain: effects of strain on the leakage current of Si diodes

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Mind the drain from strain: effects of strain on the leakage current of Si diodes

Murphy-Armando, Felipe; Liu, Chang; Zhao, Yi; Duffy, Ray
Date: 2016-10
Copyright: © 2016, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Citation: Murphy-Armando, F., Liu, C., Zhao, Y. and Duffy, R. (2016) ‘Mind the drain from strain: effects of strain on the leakage current of Si diodes’, 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Hangzhou, China, 25-28 October. doi:10.1109/ICSICT.2016.7999046
Published Version: 10.1109/ICSICT.2016.7999046

Abstract:

We present a systematic study of the impact of strain on off-state leakage current, using experimental data and ab-initio calculations. We developed new models to account for the impact of strain on band-to-band tunneling and trap-assisted tunneling in silicon. We observe that the strain can dramatically increase the leakage current, depending on the type of tunneling involved. We predict that 1% compressive strain can increase the band-to-band tunneling and Shockley Read Hall leakage currents by over 5 and 3 times, respectively.

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