Mind the drain from strain: effects of strain on the leakage current of Si diodes
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Accepted Version
Date
2016-10
Authors
Murphy-Armando, Felipe
Liu, Chang
Zhao, Yi
Duffy, Ray
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published Version
Abstract
We present a systematic study of the impact of strain on off-state leakage current, using experimental data and ab-initio calculations. We developed new models to account for the impact of strain on band-to-band tunneling and trap-assisted tunneling in silicon. We observe that the strain can dramatically increase the leakage current, depending on the type of tunneling involved. We predict that 1% compressive strain can increase the band-to-band tunneling and Shockley Read Hall leakage currents by over 5 and 3 times, respectively.
Description
Keywords
Elemental semiconductors , Leakage currents , Semiconductor diodes , Silicon , Si , Ab-initio calculations , Band-to-band tunneling , Compressive strain , Trap-assisted tunneling , Current measurement , Strain , Stress , Temperature dependence , Tunneling
Citation
Murphy-Armando, F., Liu, C., Zhao, Y. and Duffy, R. (2016) ‘Mind the drain from strain: effects of strain on the leakage current of Si diodes’, 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Hangzhou, China, 25-28 October. doi:10.1109/ICSICT.2016.7999046
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