Mind the drain from strain: effects of strain on the leakage current of Si diodes

Murphy-Armando, Felipe; Liu, Chang; Zhao, Yi; Duffy, Ray

doi:10.1109/ICSICT.2016.7999046

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dc.contributor.author	Murphy-Armando, Felipe
dc.contributor.author	Liu, Chang
dc.contributor.author	Zhao, Yi
dc.contributor.author	Duffy, Ray
dc.date.accessioned	2018-02-12T12:54:20Z
dc.date.available	2018-02-12T12:54:20Z
dc.date.issued	2016-10
dc.identifier.citation	Murphy-Armando, F., Liu, C., Zhao, Y. and Duffy, R. (2016) ‘Mind the drain from strain: effects of strain on the leakage current of Si diodes’, 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Hangzhou, China, 25-28 October. doi:10.1109/ICSICT.2016.7999046	en
dc.identifier.startpage	802	en
dc.identifier.endpage	804	en
dc.identifier.uri	http://hdl.handle.net/10468/5442
dc.identifier.doi	10.1109/ICSICT.2016.7999046
dc.description.abstract	We present a systematic study of the impact of strain on off-state leakage current, using experimental data and ab-initio calculations. We developed new models to account for the impact of strain on band-to-band tunneling and trap-assisted tunneling in silicon. We observe that the strain can dramatically increase the leakage current, depending on the type of tunneling involved. We predict that 1% compressive strain can increase the band-to-band tunneling and Shockley Read Hall leakage currents by over 5 and 3 times, respectively.	en
dc.format.mimetype	application/pdf	en
dc.language.iso	en	en
dc.publisher	Institute of Electrical and Electronics Engineers (IEEE)	en
dc.relation.ispartof	13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
dc.rights	© 2016, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.	en
dc.subject	Elemental semiconductors	en
dc.subject	Leakage currents	en
dc.subject	Semiconductor diodes	en
dc.subject	Silicon	en
dc.subject	Si	en
dc.subject	Ab-initio calculations	en
dc.subject	Band-to-band tunneling	en
dc.subject	Compressive strain	en
dc.subject	Trap-assisted tunneling	en
dc.subject	Current measurement	en
dc.subject	Strain	en
dc.subject	Stress	en
dc.subject	Temperature dependence	en
dc.subject	Tunneling	en
dc.title	Mind the drain from strain: effects of strain on the leakage current of Si diodes	en
dc.type	Conference item	en
dc.internal.authorcontactother	Raymond Duffy, Tyndall Micronano Electronics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: ray.duffy@tyndall.ie	en
dc.internal.availability	Full text available	en
dc.date.updated	2018-02-02T11:46:02Z
dc.description.version	Accepted Version	en
dc.internal.rssid	424211167
dc.contributor.funder	Science Foundation Ireland	en
dc.description.status	Not peer reviewed	en
dc.internal.copyrightchecked	Yes	en
dc.internal.licenseacceptance	Yes	en
dc.internal.conferencelocation	Hangzhou, China	en
dc.internal.IRISemailaddress	ray.duffy@tyndall.ie	en