Mind the drain from strain: effects of strain on the leakage current of Si diodes

Show simple item record

dc.contributor.author Murphy-Armando, Felipe
dc.contributor.author Liu, Chang
dc.contributor.author Zhao, Yi
dc.contributor.author Duffy, Ray
dc.date.accessioned 2018-02-12T12:54:20Z
dc.date.available 2018-02-12T12:54:20Z
dc.date.issued 2016-10
dc.identifier.citation Murphy-Armando, F., Liu, C., Zhao, Y. and Duffy, R. (2016) ‘Mind the drain from strain: effects of strain on the leakage current of Si diodes’, 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Hangzhou, China, 25-28 October. doi:10.1109/ICSICT.2016.7999046 en
dc.identifier.startpage 802 en
dc.identifier.endpage 804 en
dc.identifier.uri http://hdl.handle.net/10468/5442
dc.identifier.doi 10.1109/ICSICT.2016.7999046
dc.description.abstract We present a systematic study of the impact of strain on off-state leakage current, using experimental data and ab-initio calculations. We developed new models to account for the impact of strain on band-to-band tunneling and trap-assisted tunneling in silicon. We observe that the strain can dramatically increase the leakage current, depending on the type of tunneling involved. We predict that 1% compressive strain can increase the band-to-band tunneling and Shockley Read Hall leakage currents by over 5 and 3 times, respectively. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Institute of Electrical and Electronics Engineers (IEEE) en
dc.relation.ispartof 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
dc.rights © 2016, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. en
dc.subject Elemental semiconductors en
dc.subject Leakage currents en
dc.subject Semiconductor diodes en
dc.subject Silicon en
dc.subject Si en
dc.subject Ab-initio calculations en
dc.subject Band-to-band tunneling en
dc.subject Compressive strain en
dc.subject Trap-assisted tunneling en
dc.subject Current measurement en
dc.subject Strain en
dc.subject Stress en
dc.subject Temperature dependence en
dc.subject Tunneling en
dc.title Mind the drain from strain: effects of strain on the leakage current of Si diodes en
dc.type Conference item en
dc.internal.authorcontactother Raymond Duffy, Tyndall Micronano Electronics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: ray.duffy@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-02-02T11:46:02Z
dc.description.version Accepted Version en
dc.internal.rssid 424211167
dc.contributor.funder Science Foundation Ireland en
dc.description.status Not peer reviewed en
dc.internal.copyrightchecked Yes en
dc.internal.licenseacceptance Yes en
dc.internal.conferencelocation Hangzhou, China en
dc.internal.IRISemailaddress ray.duffy@tyndall.ie en


Files in this item

This item appears in the following Collection(s)

Show simple item record

This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement