Influence of surface stoichiometry and quantum confinement on the electronic structure of small diameter InxGa1-xAs nanowires

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dc.contributor.author Razavi, Pedram
dc.contributor.author Greer, James C.
dc.date.accessioned 2018-02-14T09:33:35Z
dc.date.available 2018-02-14T09:33:35Z
dc.date.issued 2017-12-06
dc.identifier.citation Razavi, P. and Greer, J. C. (2018) 'Influence of surface stoichiometry and quantum confinement on the electronic structure of small diameter InxGa1-xAs nanowires', Materials Chemistry and Physics, 206, pp. 35-39. doi:10.1016/j.matchemphys.2017.12.006 en
dc.identifier.volume 206 en
dc.identifier.startpage 35 en
dc.identifier.endpage 39 en
dc.identifier.issn 0254-0584
dc.identifier.uri http://hdl.handle.net/10468/5457
dc.identifier.doi 10.1016/j.matchemphys.2017.12.006
dc.description.abstract Electronic structures for InxGa1-xAs nanowires with [100], [110], and [111] orientations and critical dimensions of approximately 2 nm are treated within the framework of density functional theory. Explicit band structures are calculated and properties relevant to nanoelectronic design are extracted including band gaps, effective masses, and density of states. The properties of these III-V nanowires are compared to silicon nanowires of comparable dimensions as a reference system. In nonpolar semiconductors, quantum confinement and surface chemistry are known to play a key role in the determination of nanowire electronic structure. InxGa1-xAs nanowires have in addition effects due to alloy stoichiometry on the cation sublattice and due to the polar nature of the cleaved nanowire surfaces. The impact of these additional factors on the electronic structure for these polar semiconductor nanowires is shown to be significant and necessary for accurate treatment of electronic structure properties. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Elsevier en
dc.relation.uri http://www.sciencedirect.com/science/article/pii/S0254058417309471
dc.rights © 2017 Elsevier B.V. All rights reserved. This manuscript version is made available under the CC BY-NC-ND 4.0 license. en
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/4.0/ en
dc.subject InGaAs en
dc.subject Nanowires en
dc.subject DFT en
dc.subject Surface stoichiometry en
dc.subject Semiconductors en
dc.title Influence of surface stoichiometry and quantum confinement on the electronic structure of small diameter InxGa1-xAs nanowires en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother James Greer, Tyndall Graduate Studies, University College Cork, Cork, Ireland. +353-21-490-3000 Email: jamesgreer@ucc.ie en
dc.internal.authorcontactother Pedram Razavi, Tyndall National Institute, University College Cork, Cork, Ireland +353 21 2346675, Email: pedram.razavi@tyndall.ie
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 24 months after publication by request of the publisher. en
dc.check.date 2019-12-06
dc.date.updated 2018-02-14T09:23:20Z
dc.description.version Accepted Version en
dc.internal.rssid 425855734
dc.description.status Peer reviewed en
dc.identifier.journaltitle Materials Chemistry and Physics en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress JamesGreer@ucc.ie en
dc.internal.IRISemailaddress pedram.razavi@tyndall.ie en


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© 2017 Elsevier B.V. All rights reserved. This manuscript version is made available under the CC BY-NC-ND 4.0 license. Except where otherwise noted, this item's license is described as © 2017 Elsevier B.V. All rights reserved. This manuscript version is made available under the CC BY-NC-ND 4.0 license.
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