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Fast growth of smooth AlN in a 3 x 2 showerhead-type vertical flow MOVPE reactor
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Zubialevich, Vitaly Z.
Parbrook, Peter J.
The conditions required for a high growth rate of AlN in a 3 × 2″ showerhead-type vertical flow metalorganic vapor phase epitaxy (MOVPE) reactor are studied. It is found that at the standard growth conditions (low V/III, 50 mbar, 1110 °C, H2), the growth rate linearly increases with the trimethylaluminium (TMAl) flow rate until about 280 μmol min−1 with some drop of precursor utilization efficiency at higher pressures. While the pre-reaction of TMAl with NH3 at 140 μmol min−1 of TMAl is still not a major issue, it is not possible, however, to maintain a smooth AlN surface morphology during this “fast” growth. To suppress the surface morphology deterioration, the growth pressure requires optimization. An increase of the growth pressure, to 75 mbar, is found to be critical to grow 20+ μm of smooth AlN at a rate of about 3.6 μm h−1 on bulk AlN substrates.
III-nitride semiconductors , AlN , Crystal growth , MOCVD , MOVPE , Surface morphology
Zubialevich, V. Z., Pampili, P. and Parbrook, P. J. (2018) 'Fast Growth of Smooth AlN in a 3 × 2″ Showerhead-Type Vertical Flow MOVPE Reactor', physica status solidi (b), 1700472 (6 pp). In Press. doi: 10.1002/pssb.201700472
© 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the peer reviewed version of the following article: Zubialevich, V. Z., Pampili, P. and Parbrook, P. J. (2018), Fast Growth of Smooth AlN in a 3 × 2″ Showerhead-Type Vertical Flow MOVPE Reactor. Phys. Status Solidi B, 1700472, which has been published in final form at http://dx.doi.org/10.1002/pssb.201700472. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.