Mesoporosity in doped silicon nanowires from metal assisted chemical etching monitored by phonon scattering

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dc.contributor.author McSweeney, William
dc.contributor.author Glynn, Colm
dc.contributor.author Geaney, Hugh
dc.contributor.author Collins, Gillian
dc.contributor.author Holmes, Justin D.
dc.contributor.author O'Dwyer, Colm
dc.date.accessioned 2018-02-19T15:48:17Z
dc.date.available 2018-02-19T15:48:17Z
dc.date.issued 2015-10-01
dc.identifier.citation William, M., Colm, G., Hugh, G., Gillian, C., Justin, D. H. and Colm, O. D. (2016) 'Mesoporosity in doped silicon nanowires from metal assisted chemical etching monitored by phonon scattering', Semiconductor Science and Technology, 31(1), 014003 (13pp). doi: 10.1088/0268-1242/31/1/014003 en
dc.identifier.volume 31 en
dc.identifier.startpage 014003-1 en
dc.identifier.endpage 014003-13 en
dc.identifier.issn 0268-1242
dc.identifier.uri http://hdl.handle.net/10468/5482
dc.identifier.doi 10.1088/0268-1242/31/1/014003
dc.description.abstract Si nanowires (NWs) are shown to develop internal mesoporosity during metal assisted chemical etching from Si wafers. The onset of internal porosity in n+-Si(100) compared to p-Si(100) is examined through a systematic investigation of etching parameters (etching time, AgNO3 concentration, HF % and temperature). Electron microscopy and Raman scattering show that specific etching conditions reduce the size of the internal Si nanocrystallites in the internal mesoporous structure to 3–5 nm. Mesoporous NWs are found to have diameters as large as 500 nm, compared to ~100 nm for p-NWs that develop surface roughness. Etching of Si (100) wafers results in (100)-oriented NWs forming a three-fold symmetrical surface texture, without internal NW mesoporosity. The vertical etching rate is shown to depend on carrier concentration and degree of internal mesoporosity formation. Raman scattering of the transverse optical phonon and photoluminescence measurements confirm quantum size effects, phonon scattering and visible intense red light emission between 685 and 720 nm in internally mesoporous NWs associated with the etching conditions. Laser power heating of NWs confirms phonon confinement and scattering, which is demonstrated to be a function of the internal mesoporosity development. We also demonstrate the limitation of mesoporosity formation in n+-Si NWs and development of porosity within p-Si NWs by controlling the etching conditions. Lastly, the data confirm that phonon confinement and scattering often reported for Si NWs is due to surface-bound and internal nanostructure, rather than simply a diameter reduction in NW materials. en
dc.description.sponsorship Higher Education Authority (Irish Government’s Programme for Research in Third Level Institutions, Cycle 4, National Development Plan 2007–2013); Irish Research Council (Award No. RS/2011/797); Science Foundation Ireland (under the National Access Programme (NAP 417)) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher IOP Publishing en
dc.relation.uri http://iopscience.iop.org/article/10.1088/0268-1242/31/1/014003/pdf
dc.rights © 2016 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Semiconductor Science and Technology. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://stacks.iop.org/0268-1242/31/i=1/a=014003. en
dc.subject Porous semiconductors en
dc.subject Silicon en
dc.subject Etching en
dc.subject Nanowires en
dc.subject Raman scattering en
dc.title Mesoporosity in doped silicon nanowires from metal assisted chemical etching monitored by phonon scattering en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Colm O'Dwyer, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: c.odwyer@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-02-19T08:59:40Z
dc.description.version Accepted Version en
dc.internal.rssid 319615515
dc.contributor.funder Higher Education Authority en
dc.contributor.funder Irish Research Council en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Seventh Framework Programme en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Semiconductor Science and Technology en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress c.odwyer@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Stokes Professorship & Lectureship Programme/07/SK/B1232a/IE/Colm ODwyer/ en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Short Term Travel Fellowship (STTF)/07/SK/B1232a - STTF 11/IE/Optical Probing of Phase Changes in Inverse opal Photonic Crystal Li-on Battery Electrodes/ en
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::NMP/314508/EU/STable high-capacity lithium-Air Batteries with Long cycle life for Electric cars/STABLE en


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