We calculate the electron mobility for a metal-oxide-semiconductor system with a metallic gate, high-kappa dielectric layer, and III-V substrate, including scattering with longitudinal-optical (LO) polar-phonons of the ...

We present eight-band k . p calculations of the electronic and polarization properties of columnar InzGa1-zAs quantum dots (CQD) with high aspect ratio embedded in an InxGa1-xAs/GaAs quantum well. Our model accounts for ...

Future monolithic point of load switched mode power supplies will be expected to meet the energy requirements of miniaturized, high functionality electronic devices. Recently, Ni45Fe55 has emerged as a potentially important ...

In this paper we investigate the effects of intravalley acoustic phonon scattering on the quantum transport and on the electrical characteristics of multigate silicon nanowire metal-oxide-semiconductor field-effect ...

The feasibility of transferring hydrogen-implanted germanium to silicon with a reduced thermal budget is demonstrated. Germanium samples were implanted with a splitting dose of 5 x 10(16) H(2)(+) cm(-2) at 180 keV and a ...