Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation

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dc.contributor.author Duffy, Ray
dc.contributor.author Ricchio, Alessio
dc.contributor.author Murphy, Ruaidhrí
dc.contributor.author Maxwell, Graeme
dc.contributor.author Murphy, Richard
dc.contributor.author Piaszenski, Guido
dc.contributor.author Petkov, Nikolay
dc.contributor.author Hydes, Alan
dc.contributor.author O'Connell, Dan
dc.contributor.author Lyons, Colin
dc.contributor.author Kennedy, Noel
dc.contributor.author Sheehan, Brendan
dc.contributor.author Schmidt, Michael
dc.contributor.author Crupi, Felice
dc.contributor.author Holmes, Justin D.
dc.contributor.author Hurley, Paul K.
dc.contributor.author Connolly, James
dc.contributor.author Hatem, Chris
dc.contributor.author Long, Brenda
dc.date.accessioned 2018-04-03T14:09:51Z
dc.date.available 2018-04-03T14:09:51Z
dc.date.issued 2018-03-23
dc.identifier.citation Duffy, R., Ricchio, A., Murphy, R., Maxwell, G., Murphy, R., Piaszenski, G., Petkov, N., Hydes, A., O'Connell, D., Lyons, C., Kennedy, N., Sheehan, B., Schmidt, M., Crupi, F., Holmes, J. D., Hurley, P. K., Connolly, J., Hatem, C. and Long, B. (2018) 'Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation', Journal of Applied Physics, 123(12), 125701 (14pp). doi: 10.1063/1.5019470 en
dc.identifier.volume 123 en
dc.identifier.issued 12 en
dc.identifier.startpage 125701-1 en
dc.identifier.endpage 125701-14 en
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10468/5724
dc.identifier.doi 10.1063/1.5019470
dc.description.abstract The advent of high surface-to-volume ratio devices has necessitated a revised approach to parameter extraction and process evaluation in field-effect transistor technologies. In this work, active doping concentrations are extracted from the electrical analysis of Si nanowire devices with high surface-to-volume ratios. Nanowire resistance and Si resistivity are extracted, by first extracting and subtracting out the contact resistance. Resistivity (ρ) is selected as the benchmark parameter to compare different doping processes with each other. The impacts of nanowire diameter scaling to 10 nm and of nanowire spacing scaling to <20 nm are extracted for monolayer doping and beam-line ion implantation. Despite introducing significant crystal damage, P beam-line ion implantation beats allyldiphenylphosphine (ADP) P monolayer doping with a SiO2 cap in terms of lower Si resistivity and higher dopant activation, with dependencies on the nanowire width greater than on nanowire spacing. Limitations in ADP P monolayer doping with a SiO2 cap are due to the difficulties in dopant incorporation, as it is based on in-diffusion, and P atoms must overcome a potential barrier on the Si surface. en
dc.description.sponsorship Enterprise Ireland (Project IP-2015-0368); European Commission (European Regional Development Fund (ERDF) under Ireland's European Structural and Investment Funds Programmes 2014–2020) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri https://aip.scitation.org/doi/full/10.1063/1.5019470 en
dc.rights © 2018, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics 123, 125701 (2018) and may be found at https://aip.scitation.org/doi/full/10.1063/1.5019470 en
dc.subject Electrical engineering en
dc.subject Condensed matter properties en
dc.subject Doping en
dc.subject Semiconductor devices en
dc.subject Condensed matter physics en
dc.subject Electronic transport en
dc.subject Electronic devices en
dc.subject Nanowires en
dc.subject General physics en
dc.subject Semiconductor device fabrication en
dc.title Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-04-03T14:02:19Z
dc.description.version Published Version en
dc.internal.rssid 432431961
dc.contributor.funder Enterprise Ireland en
dc.contributor.funder European Regional Development Fund en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.internal.IRISemailaddress brenda.long@ucc.ie en

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