Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures

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dc.contributor.author Blenkhorn, William
dc.contributor.author Schulz, Stefan
dc.contributor.author Tanner, Daniel
dc.contributor.author Oliver, Rachel
dc.contributor.author Kappers, M. J.
dc.contributor.author Humphreys, C. J.
dc.contributor.author Dawson, Philip
dc.date.accessioned 2018-04-03T15:30:33Z
dc.date.available 2018-04-03T15:30:33Z
dc.date.issued 2018-03-20
dc.identifier.citation Blenkhorn, W., Schulz, S., Tanner, D., Oliver, R., Kappers, M. J., Humphreys, C. J. and Dawson, P. (2018) Journal of Physics: Condensed Matter, In Press, doi: 10.1088/1361-648X/aab818 en
dc.identifier.startpage 1 en
dc.identifier.endpage 18 en
dc.identifier.issn 1361-648X
dc.identifier.uri http://hdl.handle.net/10468/5726
dc.identifier.doi 10.1088/1361-648X/aab818
dc.description.abstract In this paper we report on changes in the form of the low temperature (12K) photoluminescence spectra of an InGaN/GaN quantum well structure as a function of excitation photon energy. As the photon energy is progressively reduced we observe at a critical energy a change in the form of the spectra from one which is determined by the occupation of the complete distribution of hole localisation centres to one which is determined by the resonant excitation of specific localisations sites. This change is governed by an effective mobility edge whereby the photo-excited holes remain localised at their initial energy and are prevented from scattering to other localisation sites. This assignment is confirmed by the results of atomistic tight binding calculations which show that the wave function overlap of the lowest lying localised holes with other hole states is low compared with the overlap of higher lying hole states with other higher lying hole states. en
dc.description.sponsorship United Kingdom Engineering and Physical Sciences Research Council (grant Nos. EP/M010589/1, EP/I012591/1, EP/M010627/1 and EP/H049533/1) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher IOP Publishing en
dc.relation.uri http://iopscience.iop.org/article/10.1088/1361-648X/aab818
dc.rights © 2018 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics: Condensed Matter. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://iopscience.iop.org/10.1088/1361-648X/aab818. As the Version of Record of this article is going to be published on a subscription basis, this Accepted Manuscript will be available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period. en
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/3.0/ en
dc.subject Photon energy en
dc.subject Photoluminescence spectra en
dc.subject InGaN/GaN quantum well structure en
dc.subject Excitation en
dc.title Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Stefan Schulz, Tyndall Theory Modelling & Design Centre, University College Cork, Cork, Ireland. +353-21-490-3000 Email: stefan.schulz@tyndall.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 12 months after publication by request of the publisher. en
dc.check.date 2019-03-20
dc.date.updated 2018-04-03T15:13:13Z
dc.description.version Accepted Version en
dc.internal.rssid 432431971
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Engineering and Physical Sciences Research Council en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Physics: Condensed Matter en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress stefan.schulz@tyndall.ie en
dc.relation.project info:eu-repo/grantAgreement/RCUK/EPSRC/EP/M010589/1/GB/Beyond Blue: New Horizons in Nitrides (Platform Grant Renewal)/ en
dc.relation.project info:eu-repo/grantAgreement/RCUK/EPSRC/EP/I012591/1/GB/Lighting the Future/ en
dc.relation.project info:eu-repo/grantAgreement/RCUK/EPSRC/EP/M010627/1/GB/Beyond Blue: New Horizons in Nitrides/ en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/13/SIRG/2210/IE/Shaping the electronic and optical properties of non- and semi-polar nitride-based semiconductor nanostructures/ en


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© 2018 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics: Condensed Matter. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://iopscience.iop.org/10.1088/1361-648X/aab818. As the Version of Record of this article is going to be published on a subscription basis, this Accepted Manuscript will be available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period. Except where otherwise noted, this item's license is described as © 2018 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics: Condensed Matter. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://iopscience.iop.org/10.1088/1361-648X/aab818. As the Version of Record of this article is going to be published on a subscription basis, this Accepted Manuscript will be available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period.
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