Impact of second-order piezoelectricity on electronic and optical properties of c-plane InxGa12xN quantum dots: consequences for long wavelength emitters

Show simple item record

dc.contributor.author Patra, Saroj K.
dc.contributor.author Schulz, Stefan
dc.date.accessioned 2018-04-09T16:45:42Z
dc.date.available 2018-04-09T16:45:42Z
dc.date.issued 2017-09-05
dc.identifier.citation Patra, S. K. and Schulz, S. (2017) 'Impact of second-order piezoelectricity on electronic and optical properties of c-plane InxGa12xN quantum dots: consequences for long wavelength emitters', Applied Physics Letters, 111(10), 103103 (5pp). doi:10.1063/1.4991720 en
dc.identifier.volume 111 en
dc.identifier.issued 10 en
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/5748
dc.identifier.doi 10.1063/1.4991720
dc.description.abstract In this work, we present a detailed analysis of the second-order piezoelectric effect in c-plane InxGa1xN/GaN quantum dots and its consequences for electronic and optical properties of these systems. Special attention is paid to the impact of increasing In content x on the results. We find that in general the second-order piezoelectric effect leads to an increase in the electrostatic built-in field. Furthermore, our results show that for an In content 30%, this increase in the built-in field has a significant effect on the emission wavelength and the radiative lifetimes. For instance, at 40% In, the radiative lifetime is more than doubled when taking second-order piezoelectricity into account. Overall, our calculations reveal that when designing and describing the electronic and optical properties of c-plane InxGa1xN/GaN quantum dot based light emitters with high In contents, second-order piezoelectric effects cannot be neglected. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.rights © 2017, the Authors. Published by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and AIP Publishing. The following article appeared in Patra, S. K. and Schulz, S., Applied Physics Letters, 111(10), 103103 (5pp), and may be found at http://dx.doi.org/10.1063/1.4991720 en
dc.subject Second-order piezoelectric effect en
dc.subject Electrostatic built-in field en
dc.subject Emission wavelength en
dc.subject Radiative lifetime en
dc.title Impact of second-order piezoelectricity on electronic and optical properties of c-plane InxGa12xN quantum dots: consequences for long wavelength emitters en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Stefan Schulz, Tyndall Theory Modelling & Design Centre, University College Cork, Cork, Ireland. +353-21-490-3000 Email: stefan.schulz@tyndall.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 12 months after publication by request of the publisher.
dc.check.date 2018-09-05
dc.date.updated 2018-03-29T11:17:31Z
dc.description.version Accepted Version en
dc.internal.rssid 431799755
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.copyrightchecked Yes en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress stefan.schulz@tyndall.ie en
dc.identifier.articleid 103103
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/13/SIRG/2210/IE/Shaping the electronic and optical properties of non- and semi-polar nitride-based semiconductor nanostructures/ en


Files in this item

This item appears in the following Collection(s)

Show simple item record

This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement