Recently added

CORA: Recently added

  • Impact of metal hybridization on contact resistance and leakage current of carbon nanotube transistors 
    Su, Sheng-Kai; Sanchez-Soares, Alfonso; Chen, Edward; Kelly, Thomas; Fagas, Giorgos; Greer, James C.; Pitner, Gregory; Wong, H.-S. Philip; Radu, Iuliana P. (Institute of Electrical and Electronics Engineers (IEEE), 2022-06-24)
    Carbon nanotube field effect transistors (CNFETs) have potential applications in future logic technology as they display good electrostatic control and excellent transport properties. However, contact resistance and leakage ...
  • An 868 MHz Bandage Type Antenna using Aluminum conductor and PDMS substrate 
    Kumar, Sanjeev; Simorangkir, Roy B. V. B.; Gawade, Dinesh R.; Quinn, Aidan J.; O'Flynn, Brendan; Buckley, John L. (2022-05-16)
    This paper presents an 868 MHz ultra-high frequency (UHF) bandage-type antenna for wireless body sensor network applications. The proposed antenna has a modified planar rectangular patch antenna topology and is realized ...
  • Exploratory study and application of the angular wavelet analysis for assessing the spatial distribution of breakdown spots in Pt/HfO2/Pt structures 
    Muñoz-Gorriz, J.; Monaghan, Scott; Cherkaoui, Karim; Suñé, J.; Hurley, Paul K.; Miranda, E. (AIP Publishing, 2017-12-05)
    The angular wavelet analysis is applied for assessing the spatial distribution of breakdown spots in Pt/HfO2/Pt capacitors with areas ranging from 104 to 105 μm2. The breakdown spot lateral sizes are in the range from 1 ...
  • The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications 
    Toomey, B.; Cherkaoui, Karim; Monaghan, Scott; Djara, Vladimir; O'Connor, Éamon; O'Connell, D.; Oberbeck, L.; Tois, E.; Blomberg, T.; Newcomb, S. B.; Hurley, Paul K. (Elsevier B.V., 2012-01-12)
    Hafnium erbium oxide (HfErOx) thin films were formed using atomic layer deposition. The effect of using different Hf:Er pulse ratios on the electrical and structural properties of the HfErOx thin films (∼9 nm) in ...
  • Multi-technique characterisation of MOVPE-grown GaAs on Si 
    Wong, Chiu Soon; Bennett, Nick S.; McNally, Patrick J.; Galiana, B.; Tejedor, P.; Benedicto, M.; Molina-Aldareguia, J. M.; Monaghan, Scott; Hurley, Paul K.; Cherkaoui, Karim (Elsevier B.V., 2010-10-08)
    The heterogeneous integration of III-V materials on a Si CMOS platform offers tremendous prospects for future high-speed and low-power logic applications. That said this integration generates immense scientific and ...
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