Pore size modulation in electrochemically etched macroporous p-type silicon monitored by FFT impedance spectroscopy and Raman scattering

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dc.contributor.author Quiroga-Gonzalez, Enrique
dc.contributor.author Carstensen, Jurgen
dc.contributor.author Glynn, Colm
dc.contributor.author O'Dwyer, Colm
dc.contributor.author Foll, Helmut
dc.date.accessioned 2018-05-11T10:30:58Z
dc.date.available 2018-05-11T10:30:58Z
dc.date.issued 2013-10-30
dc.identifier.citation Quiroga-Gonzalez, E., Carstensen, J., Glynn, C., O'Dwyer, C. and Foll, H. (2014) 'Pore size modulation in electrochemically etched macroporous p-type silicon monitored by FFT impedance spectroscopy and Raman scattering', Physical Chemistry Chemical Physics, 16(1), pp. 255-263. doi: 10.1039/C3CP53600A en
dc.identifier.volume 16 en
dc.identifier.issued 1 en
dc.identifier.startpage 255 en
dc.identifier.endpage 263 en
dc.identifier.issn 1463-9076
dc.identifier.uri http://hdl.handle.net/10468/6083
dc.identifier.doi 10.1039/C3CP53600A
dc.description.abstract The understanding of the mechanisms of macropore formation in p-type Si with respect to modulation of the pore diameter is still in its infancy. In the present work, macropores with significantly modulated diameters have been produced electrochemically in p-type Si. The effect of the current density and the amount of surfactant in the etching solution are shown to influence the modulation in pore diameter and morphology. Data obtained during the etching process by in situ FFT impedance spectroscopy correlate the pore diameter variation with certain time constants found in the kinetics of the dissolution process. Raman scattering and electron microscopy confirm the mesoscopic structure and roughening of the pore walls. Spectroscopic and microscopic methods confirm that the pore wall morphology is correlated with the conditions of pore modulation. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Royal Society of Chemistry (RSC) en
dc.relation.uri http://pubs.rsc.org/en/content/articlelanding/2014/cp/c3cp53600a#!divAbstract
dc.rights © the Owner Societies 2014; Royal Society ofChemistry en
dc.subject Macropore formation en
dc.subject Raman scattering en
dc.subject Electron microscopy en
dc.subject Pore modulation en
dc.subject Silicon en
dc.subject p-type Si en
dc.subject FFT impedance spectroscopy en
dc.title Pore size modulation in electrochemically etched macroporous p-type silicon monitored by FFT impedance spectroscopy and Raman scattering en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Colm O'Dwyer, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: c.odwyer@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-05-03T08:42:01Z
dc.description.version Submitted Version en
dc.internal.rssid 240737112
dc.description.status Peer reviewed en
dc.identifier.journaltitle Physical Chemistry Chemical Physics en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress c.odwyer@ucc.ie en


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