Epitaxial growth of (0001) oriented porous GaN layers by chemical vapour deposition

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dc.contributor.author Bilousov, Oleksandr V.
dc.contributor.author Carvajal, Joan J.
dc.contributor.author Mena, Josue
dc.contributor.author Martinez, Oscar
dc.contributor.author Jimenez, Juan
dc.contributor.author Geaney, Hugh
dc.contributor.author Diaz, Francesc
dc.contributor.author Aguilo, Magdalena
dc.contributor.author O'Dwyer, Colm
dc.date.accessioned 2018-05-11T15:04:33Z
dc.date.available 2018-05-11T15:04:33Z
dc.date.issued 2014-09-22
dc.identifier.citation Bilousov, O. V., Carvajal, J. J., Mena, J., Martinez, O., Jimenez, J., Geaney, H., Diaz, F., Aguilo, M. and O'Dwyer, C. (2014) 'Epitaxial growth of (0001) oriented porous GaN layers by chemical vapour deposition', CrystEngComm, 16(44), pp. 10255-10261. doi: 10.1039/C4CE01339E en
dc.identifier.volume 16 en
dc.identifier.startpage 10255 en
dc.identifier.endpage 10261 en
dc.identifier.issn 1466-8033
dc.identifier.uri http://hdl.handle.net/10468/6092
dc.identifier.doi 10.1039/C4CE01339E
dc.description.abstract LEDs with enhanced light extraction efficiency and sensors with improved sensitivity have been developed using porous semiconductors. Here, the growth of porous GaN epitaxial layers oriented along the [0001] crystallographic direction on Al2O3, SiC, AlN and GaN substrates is demonstrated. A lattice mismatch between the substrate and the porous GaN layer directly affects the structure and porosity of the porous GaN layer on each substrate. Deposition of unintentionally doped n-type porous GaN on non-porous p-type GaN layers allows for the fabrication of high quality rectifying p–n junctions, with potential applications in high brightness unencapsulated GaN-based light emitting diodes and high surface area wide band gap sensor devices. en
dc.description.sponsorship Ministerio de Economía, Industria y Competitividad, Gobierno de España (projects no. MAT2011-29255-C02-02, TEC2010-21574-C02-02); Generalitat de Catalunya ((project no. 2009SGR235); fellowship 2013FI-B2 00108); Consejería de Educación, Junta de Castilla y León (project no. VA166A11-2); University College Cork (UCC Strategic Research Fund); Irish Research Council (New Foundations Award 2012); en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Royal Society of Chemistry (RSC) en
dc.relation.uri http://pubs.rsc.org/en/content/articlelanding/2014/ce/c4ce01339e#!divAbstract
dc.rights © The Royal Society of Chemistry 2014 en
dc.subject LEDs en
dc.subject Porous semiconductors en
dc.subject Light emitting diodes en
dc.subject GaN layer en
dc.subject Light extraction efficiency en
dc.title Epitaxial growth of (0001) oriented porous GaN layers by chemical vapour deposition en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Colm O'Dwyer, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: c.odwyer@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-05-03T10:49:49Z
dc.description.version Accepted Version en
dc.internal.rssid 275687424
dc.contributor.funder Seventh Framework Programme en
dc.contributor.funder Consejería de Educación, Junta de Castilla y León en
dc.contributor.funder University College Cork en
dc.contributor.funder Generalitat de Catalunya en
dc.contributor.funder Ministerio de Economía, Industria y Competitividad, Gobierno de España en
dc.description.status Peer reviewed en
dc.identifier.journaltitle CrystEngComm en
dc.internal.copyrightchecked Yes en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress c.odwyer@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::SPA/263044/EU/Small debris removal by laser illumination and complementary technologie/CLEANSPACE en

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