Metal catalyzed porous n-type GaN layers: low resistivity ohmic contacting and single-step MgO/GaN diode formation

Show simple item record Bilousov, Oleksandr V. Carvajal, Joan J. Drouin, Dominique Vilalta, A. Ruterana, P. Pujol, M. C. Mateos, X. Diaz, Francesc Aguilo, Magdalena O'Dwyer, Colm 2018-05-16T14:59:54Z 2018-05-16T14:59:54Z 2013-04
dc.identifier.citation Bilousov, O. V., Carvajal, J. J., Drouin, D., Vilalta, A., Ruterana, P., Pujol, M. C., Mateos, X., Díaz, F., Aguiló, M. and O'Dwyer, C. (2013) 'Metal Catalyzed Porous n-type GaN Layers: Low Resistivity Ohmic Contacting and Single-Step MgO/GaN Diode Formation', ECS Transactions, 53(2), pp. 17-27. doi: 10.1149/05302.0017ecst en
dc.identifier.volume 53 en
dc.identifier.issued 2 en
dc.identifier.startpage 17 en
dc.identifier.endpage 27 en
dc.identifier.issn 1938-5862
dc.identifier.doi 10.1149/05302.0017ecst
dc.description.abstract Porous GaN crystals have been successfully grown and electrically contacted simultaneously on Pt- and Au-coated silicon substrates as porous crystals and as porous layers. By the direct reaction of metallic Ga and NH3 gas through chemical vapor deposition, intermetallic metal-Ga alloys form at the GaN-metal interface, allowing vapoursolid- solid seeding and subsequent growth of porous GaN. Currentvoltage and capacitance-voltage measurements confirm that the intermetallic seed layers prevent interface oxidation and give a highquality reduced workfunction contact that allows exceptionally low contact resistivity. Additionally, the simultaneous formation of a lower workfunction intermetallic permits ohmic electron transport to n-type GaN grown using high workfunction metals that best catalyze the formation of porous GaN layers and may be employed to seed and ohmically contact a range of III-N compounds and alloys for broadband absorption and emission. Additionally, we show how a porous GaN rectifying diode can be formed by oxidatively crystallizing Mg typically employed for p-doping GaN, as a layer formed under porous structure resulting in a high-k polycrystalline MgO dielectric. en
dc.description.sponsorship Ministerio de Economía y Competitividad (the Spanish Government under Projects No. MAT2011-29255-C02-02, TEC2010-21574-C02-02, PI09/90527); Generalitat de Catalunya (Catalan Authority under Project No. 2009SGR235) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Electrochemical Society en
dc.rights © 2013 ECS - The Electrochemical Society en
dc.subject Gallium nitrade en
dc.subject Chemical vapor deposition en
dc.subject Energy gap en
dc.subject Gallium alloys en
dc.subject Metals en
dc.subject Phase interfaces en
dc.subject Semiconductor materials en
dc.subject Vapors en
dc.title Metal catalyzed porous n-type GaN layers: low resistivity ohmic contacting and single-step MgO/GaN diode formation en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Colm O'Dwyer, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en 2018-05-15T23:17:41Z
dc.description.version Accepted Version en
dc.internal.rssid 211787837
dc.contributor.funder Seventh Framework Programme en
dc.contributor.funder Ministerio de Economía y Competitividad en
dc.contributor.funder Generalitat de Catalunya en
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle ECS Transactions en
dc.internal.copyrightchecked Yes en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress en
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::SPA/263044/EU/Small debris removal by laser illumination and complementary technologie/CLEANSPACE en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Stokes Professorship & Lectureship Programme/07/SK/B1232a/IE/Colm ODwyer/ en

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