Citation:Lynch, R. P., Quill, N., O'Dwyer, C., Dornhege, M., Rotermund, H. H. and Buckley, D. N. (2013) '(Invited) Cessation of Porous Layer Growth in n-InP Anodised in KOH', ECS Transactions, 53(6), pp. 65-79. doi: 10.1149/05306.0065ecst
Anodisation of n-InP in KOH results in the formation of porous layers with a finite thickness. We propose the reason for the cessation of porous etching is the formation of insoluble precipitates within the pores. Electron micrographs of mature porous layers show significant precipitates within the porous structure. An in-situ microscopy study of the surface of InP electrode during anodisation reveals the formation of a layer on the surface. This layer emerges from a point on the surface and quickly spreads across it. A likely source of this layer is the spreading of precipitation from the etch-products saturated solution within the porous layer. However, as we explain, once a complete porous layer has formed, there should be no significant increase in mass transport requirements through the porous network, leaving the exact mechanism of the precipitation unclear.
Bilousov, Oleksandr V.; Carvajal, Joan J.; Drouin, Dominique; Mateos, Xavier; Diaz, Francesc; Aguilo, Magdalena; O'Dwyer, Colm(American Chemical Society (ACS), 2012-11-20)
Porous GaN crystals have been successfully grown and electrically contacted simultaneously on Pt- and Au-coated silicon substrates as porous crystals and as porous layers. By the direct reaction of metallic Ga and NH3 gas ...
Lynch, Robert P.; Quill, Nathan; O'Dwyer, Colm; Buckley, D. Noel(Electrochemical Society, 2013-07)
We have performed a computer simulation of the current during anodization of InP in aqueous KOH electrolyte based on the spatial characteristics of the porous structures that are formed. Specifically, we have developed a ...
Lynch, Robert P.; O'Dwyer, Colm; Sutton, David; Newcomb, Simon B.; Buckley, D. Noel(Electrochemical Society, 2007-05)
A model of porous structure growth in semiconductors based on propagation of pores along the <111>A directions has been developed. The model predicts that pores originating at a surface pit lead to porous domains with a ...
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