Current-line oriented pore formation in n-InP anodized in KOH
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Accepted version
Date
2013-07
Authors
Quill, Nathan
Lynch, Robert P.
O'Dwyer, Colm
Buckley, D. Noel
Journal Title
Journal ISSN
Volume Title
Publisher
Electrochemical Society
Published Version
Abstract
Electrochemically formed pores in InP in KOH switch from being crystallographically oriented (CO) to being current-line oriented (CLO) above a specific potential in both 17 mol dm-3 and 2.5 mol dm-3 KOH at a temperature of 10oC. The CLO pores formed in KOH have roughly elliptical cross sections, and are wider along the than along the perpendicular <011> direction. The CLO pores can form only when a critical porosity is reached and their formation marks the transition from porous to planar etching. Many of the features of pore formation are explained by evoking the effect that both temperature and electrolyte concentration can have on the effective diffusion length of holes at the semiconductor-solution interface.
Description
Keywords
Pore size , Electrochemical properties , Critical porosity , Effective diffusion length , Electrolyte concentration , Elliptical cross section , InP , Pore formation
Citation
Quill, N., Lynch, R. P., O'Dwyer, C. and Buckley, D. N. (2013) 'Current-Line Oriented Pore Formation in n-InP Anodized in KOH', ECS Transactions, 50(37), pp. 143-153. doi: 10.1149/05037.0143ecst
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© 2013 ECS - The Electrochemical Society