Carrier trapping study on a Ge nanocrystal by two-pass lift mode electrostatic force microscopy

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dc.contributor.author Lin, Zhen
dc.contributor.author Brunkov, Pavel N.
dc.contributor.author Bassani, Franck
dc.contributor.author Descamps, Armel
dc.contributor.author O'Dwyer, Colm
dc.contributor.author Bremond, Georges
dc.date.accessioned 2018-05-28T15:01:31Z
dc.date.available 2018-05-28T15:01:31Z
dc.date.issued 2015-03
dc.identifier.citation Lin, Z., Brunkov, P., Bassani, F., Descamps, A., O’Dwyer, C. and Bremond, G. (2015) 'Carrier trapping study on a Ge nanocrystal by two-pass lift mode electrostatic force microscopy', Materials Research Express, 2(3), 035001 (10pp). doi: 10.1088/2053-1591/2/3/035001 en
dc.identifier.volume 2 en
dc.identifier.startpage 035001-1 en
dc.identifier.endpage 035001-10 en
dc.identifier.issn 2053-1591
dc.identifier.uri http://hdl.handle.net/10468/6200
dc.identifier.doi 10.1088/2053-1591/2/3/035001
dc.description.abstract Trapped charges inside an isolated germanium nanocrystal (Ge NC) have been studied by two-pass lift mode electrostatic force microscopy (EFM) measurements at room temperature. From visualized EFM images, electrons and holes were proven to be successfully injected and trapped in the Ge NC and distributed homogenously at the edge of its truncated spherical morphology. The Ge NC is found to have iso-potential surface and behave as a conductive material after being charged. It is also shown that the dominant charge decay mechanism during discharging of Ge NCs is related to the leakage of these trapped charges. A truncated capacitor model is used to approximate the real capacitance between the tip and Ge NC surface and to quantitatively study these trapped charges. These investigations demonstrate the potential for Ge nanocrystal memory applications. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher IOP Publishing en
dc.relation.uri http://iopscience.iop.org/2053-1591/2/3/035001/article
dc.rights This is an author-created, un-copyedited version of an article accepted for publication in Materials Research Express. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/2053-1591/2/3/035001 en
dc.subject Electrostatic force microscopy en
dc.subject Germanium nanocrystal en
dc.subject Memory device en
dc.subject Nanostructure en
dc.title Carrier trapping study on a Ge nanocrystal by two-pass lift mode electrostatic force microscopy en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Colm O'Dwyer, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: c.odwyer@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-05-03T07:58:03Z
dc.description.version Accepted Version en
dc.internal.rssid 276843751
dc.description.status Peer reviewed en
dc.identifier.journaltitle Materials Research Express en
dc.internal.copyrightchecked Yes en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress c.odwyer@ucc.ie en


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