Precursor concentration and substrate effects on high rate dip-coated vanadium oxide thin films.

Glynn, Colm; Aureau, Damien; O'Hanlon, Sally; Daly, Luke; Geaney, Hugh; Collins, Gillian; Etcheberry, Arnaud; O'Dwyer, Colm

Precursor concentration and substrate effects on high rate dip-coated vanadium oxide thin films.

Files

ECST_Cancun_-_Colm_Glynn.pdf(508.26 KB)

Accepted version

Date

2015-05

Authors

Glynn, Colm

Aureau, Damien

O'Hanlon, Sally

Daly, Luke

Geaney, Hugh

Collins, Gillian

Etcheberry, Arnaud

O'Dwyer, Colm

Publisher

Electrochemical Society

Published Version

10.1149/06442.0001ecst

Abstract

Uniform thin films of vanadium pentoxide were dip-coated from a high-concentration vanadium oxytriisopropoxide precursor which is shown to be resistant to the dewetting processes which can form surface pinhole defects. Through appropriate withdrawal speed choice, the thin films have a smooth uniform surface morphology with a low rms roughness of <1 nm in both their amorphous and crystallized states. The structure of the thin films follows that of bulk vanadium pentoxide but in a nanostructured form. The deposition methods shown can be applied to prepare thin films upon a variety of different substrates and other alkoxide based metal oxide materials.

Keywords

Films , Thin films , Deposition methods , Dewetting process , Different substrates , Metal oxide materials , Precursor concentration , Substrate effects , Vanadium oxide thin films , Vanadium pentoxide , Amorphous films , Deposition , Metals , Oxide films , Photonics , Substrates , Surface defects , Vanadium , Vanadium compounds

Citation

Glynn, C., Aureau, D., O'Hanlon, S., Daly, L., Geaney, H., Collins, G., Etcheberry, A. and O'Dwyer, C. (2015) 'Precursor Concentration and Substrate Effects on High Rate Dip-Coated Vanadium Oxide Thin Films', ECS Transactions, 64(42), pp. 1-9. doi: 10.1149/06442.0001ecst