On-chip investigation of phase noise in monolithically integrated gain-switched lasers

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On-chip investigation of phase noise in monolithically integrated gain-switched lasers

Alexander, Justin K.; Morrissey, Padraic E.; Caro, Ludovic; Dernaika, Mohamad; Kelly, Niall P.; Peters, Frank H.
Date: 2017-03-15
Copyright: © 2017, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Citation: Alexander, J. K., Morrissey, P. E., Caro, L., Dernaika, M., Kelly, N. P. and Peters, F. H. (2017) 'On-chip investigation of phase noise in monolithically integrated gain-switched lasers', IEEE Photonics Technology Letters, 29(9), pp. 731-734. doi:10.1109/LPT.2017.2682560
Published Version: 10.1109/LPT.2017.2682560

Abstract:

Phase noise in gain-switched lasers is investigated theoretically using the semiconductor laser rate equations and compared with the experimental results from monolithically integrated devices. The phase noise of a gain-switched laser is modelled both with and without injection-locking using the rate equations for a single-mode laser. Phase noise is found to increase with gain-switching, and decrease when injection-locked to a master laser. This trend is then observed experimentally on-chip with monolithically integrated devices without the use of an isolator.

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