Nanoporous domains in n-InP anodized in KOH

Lynch, Robert P.; O'Dwyer, Colm; Sutton, David; Newcomb, Simon B.; Buckley, D. Noel

Nanoporous domains in n-InP anodized in KOH

Files

directions_1192_0_art_0_jdkwhc.pdf(1.22 MB)

Accepted version

Date

2007-05

Authors

Lynch, Robert P.

O'Dwyer, Colm

Sutton, David

Newcomb, Simon B.

Buckley, D. Noel

Publisher

Electrochemical Society

Published Version

10.1149/1.2731203

Abstract

A model of porous structure growth in semiconductors based on propagation of pores along the <111>A directions has been developed. The model predicts that pores originating at a surface pit lead to porous domains with a truncated tetrahedral shape. SEM and TEM were used to examine cross- sections of n-InP electrodes in the early stages of anodization in aqueous KOH and showed that pores propagate along the <111>A directions. Domain outlines observed in both TEM and SEM images are in excellent agreement with the model. The model is further supported by plan-view TEM and surface SEM images. Quantitative measurements of aspect ratios of the observed domains are in excellent agreement with the predicted values.

Keywords

(1 1 0) surface , Anodization , Compound semiconductor (CS) , Cross sections (CS) , Early stages , Electrochemical Society (ECS) , International symposium , Nano porous , Porous domains , Porous structures , Predicted values , Quantitative measurements , Scanning electron microscopy (SEM) images , SEM and TEM , Solution interfaces

Citation

Lynch, R. P., O'Dwyer, C., Sutton, D., Newcomb, S. B. and Buckley, D. N. (2007) 'Nanoporous Domains in n-InP Anodized in KOH', ECS Transactions, 6(2), pp. 355-366. doi: 10.1149/1.2731203