Nanoporous domains in n-InP anodized in KOH

Show simple item record Lynch, Robert P. O'Dwyer, Colm Sutton, David Newcomb, Simon B. Buckley, D. Noel 2018-06-14T11:45:14Z 2018-06-14T11:45:14Z 2007-05
dc.identifier.citation Lynch, R. P., O'Dwyer, C., Sutton, D., Newcomb, S. B. and Buckley, D. N. (2007) 'Nanoporous Domains in n-InP Anodized in KOH', ECS Transactions, 6(2), pp. 355-366. doi: 10.1149/1.2731203 en
dc.identifier.volume 6 en
dc.identifier.startpage 355 en
dc.identifier.endpage 366 en
dc.identifier.issn 1938-5862
dc.identifier.doi 10.1149/1.2731203
dc.description.abstract A model of porous structure growth in semiconductors based on propagation of pores along the <111>A directions has been developed. The model predicts that pores originating at a surface pit lead to porous domains with a truncated tetrahedral shape. SEM and TEM were used to examine cross- sections of n-InP electrodes in the early stages of anodization in aqueous KOH and showed that pores propagate along the <111>A directions. Domain outlines observed in both TEM and SEM images are in excellent agreement with the model. The model is further supported by plan-view TEM and surface SEM images. Quantitative measurements of aspect ratios of the observed domains are in excellent agreement with the predicted values. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Electrochemical Society en
dc.relation.ispartof 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting
dc.rights © 2007 ECS - The Electrochemical Society en
dc.subject (1 1 0) surface en
dc.subject Anodization en
dc.subject Compound semiconductor (CS) en
dc.subject Cross sections (CS) en
dc.subject Early stages en
dc.subject Electrochemical Society (ECS) en
dc.subject International symposium en
dc.subject Nano porous en
dc.subject Porous domains en
dc.subject Porous structures en
dc.subject Predicted values en
dc.subject Quantitative measurements en
dc.subject Scanning electron microscopy (SEM) images en
dc.subject SEM and TEM en
dc.subject Solution interfaces en
dc.title Nanoporous domains in n-InP anodized in KOH en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Colm O'Dwyer, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en 2018-06-11T10:15:42Z
dc.description.version Accepted Version en
dc.internal.rssid 162343199
dc.description.status Peer reviewed en
dc.identifier.journaltitle Electrochemical Society Transactions en
dc.internal.copyrightchecked Yes en
dc.internal.licenseacceptance Yes en
dc.internal.conferencelocation Chicago, IL, United State en
dc.internal.IRISemailaddress en

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