dc.contributor.author |
Lynch, Robert P. |
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dc.contributor.author |
O'Dwyer, Colm |
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dc.contributor.author |
Quill, Nathan |
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dc.contributor.author |
Nakahara, Shohei |
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dc.contributor.author |
Newcomb, Simon B. |
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dc.contributor.author |
Buckley, D. Noel |
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dc.date.accessioned |
2018-06-14T14:44:51Z |
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dc.date.available |
2018-06-14T14:44:51Z |
|
dc.date.issued |
2008-10 |
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dc.identifier.citation |
Lynch, R., O'Dwyer, C., Quill, N., Nakahara, S., Newcomb, S. B. and Buckley, D. N. (2008) 'Preferential <111>A Pore Propagation Mechanism in n-InP Anodized in KOH', ECS Transactions, 16(3), pp. 393-404. |
en |
dc.identifier.volume |
16 |
en |
dc.identifier.startpage |
393 |
en |
dc.identifier.endpage |
404 |
en |
dc.identifier.issn |
1938-5862 |
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dc.identifier.uri |
http://hdl.handle.net/10468/6306 |
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dc.identifier.doi |
10.1149/1.2982579 |
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dc.description.abstract |
This paper describes the formation of pores during the anodization of n-InP in aqueous KOH. The pores propagate preferentially along the <111>A crystallographic directions and form truncated tetrahedral domains. A model is presented that explains preferential <111>A pore propagation and the uniform diameters of pores. The model outlines how pores can deviate from the <111>A directions and from their characteristic diameters. It also details the effect of variation of carrier concentration on the dimensions of the porous structures. |
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dc.format.mimetype |
application/pdf |
en |
dc.language.iso |
en |
en |
dc.publisher |
Electrochemical Society |
en |
dc.relation.ispartof |
Porous Semiconductors: A Symposium Held in Memory of Vitali Parkhutik and Volker Lehmann - 214th ECS Meeting; Honolulu, HI; United States; 12 October 2008 through 17 October 2008; Code 75747 |
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dc.relation.uri |
http://ecst.ecsdl.org/content/16/3/393.abstract |
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dc.rights |
© 2008 ECS - The Electrochemical Society |
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dc.subject |
Electric conductivity |
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dc.subject |
Carrier concentration |
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dc.subject |
Crystals |
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dc.subject |
Semiconductor materials |
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dc.subject |
Anodization |
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dc.subject |
Crystallographic directions |
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dc.subject |
Inp |
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dc.subject |
Porous structures |
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dc.subject |
Propagation mechanisms |
en |
dc.subject |
Uniform diameters |
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dc.title |
Preferential <111>A pore propagation mechanism in n-InP anodized in KOH |
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dc.type |
Article (peer-reviewed) |
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dc.internal.authorcontactother |
Colm O'Dwyer, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: c.odwyer@ucc.ie |
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dc.internal.availability |
Full text available |
en |
dc.date.updated |
2018-06-11T10:32:19Z |
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dc.description.version |
Accepted Version |
en |
dc.internal.rssid |
162343203 |
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dc.description.status |
Peer reviewed |
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dc.identifier.journaltitle |
Electrochemical Society Transactions |
en |
dc.internal.copyrightchecked |
Yes |
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dc.internal.licenseacceptance |
Yes |
en |
dc.internal.conferencelocation |
Honolulu, HI; United States |
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dc.internal.IRISemailaddress |
c.odwyer@ucc.ie |
en |