Preferential <111>A pore propagation mechanism in n-InP anodized in KOH

Lynch, Robert P.; O'Dwyer, Colm; Quill, Nathan; Nakahara, Shohei; Newcomb, Simon B.; Buckley, D. Noel

doi:10.1149/1.2982579

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dc.contributor.author	Lynch, Robert P.
dc.contributor.author	O'Dwyer, Colm
dc.contributor.author	Quill, Nathan
dc.contributor.author	Nakahara, Shohei
dc.contributor.author	Newcomb, Simon B.
dc.contributor.author	Buckley, D. Noel
dc.date.accessioned	2018-06-14T14:44:51Z
dc.date.available	2018-06-14T14:44:51Z
dc.date.issued	2008-10
dc.identifier.citation	Lynch, R., O'Dwyer, C., Quill, N., Nakahara, S., Newcomb, S. B. and Buckley, D. N. (2008) 'Preferential <111>A Pore Propagation Mechanism in n-InP Anodized in KOH', ECS Transactions, 16(3), pp. 393-404.	en
dc.identifier.volume	16	en
dc.identifier.startpage	393	en
dc.identifier.endpage	404	en
dc.identifier.issn	1938-5862
dc.identifier.uri	http://hdl.handle.net/10468/6306
dc.identifier.doi	10.1149/1.2982579
dc.description.abstract	This paper describes the formation of pores during the anodization of n-InP in aqueous KOH. The pores propagate preferentially along the <111>A crystallographic directions and form truncated tetrahedral domains. A model is presented that explains preferential <111>A pore propagation and the uniform diameters of pores. The model outlines how pores can deviate from the <111>A directions and from their characteristic diameters. It also details the effect of variation of carrier concentration on the dimensions of the porous structures.	en
dc.format.mimetype	application/pdf	en
dc.language.iso	en	en
dc.publisher	Electrochemical Society	en
dc.relation.ispartof	Porous Semiconductors: A Symposium Held in Memory of Vitali Parkhutik and Volker Lehmann - 214th ECS Meeting; Honolulu, HI; United States; 12 October 2008 through 17 October 2008; Code 75747
dc.relation.uri	http://ecst.ecsdl.org/content/16/3/393.abstract
dc.rights	© 2008 ECS - The Electrochemical Society	en
dc.subject	Electric conductivity	en
dc.subject	Carrier concentration	en
dc.subject	Crystals	en
dc.subject	Semiconductor materials	en
dc.subject	Anodization	en
dc.subject	Crystallographic directions	en
dc.subject	Inp	en
dc.subject	Porous structures	en
dc.subject	Propagation mechanisms	en
dc.subject	Uniform diameters	en
dc.title	Preferential <111>A pore propagation mechanism in n-InP anodized in KOH	en
dc.type	Article (peer-reviewed)	en
dc.internal.authorcontactother	Colm O'Dwyer, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: c.odwyer@ucc.ie	en
dc.internal.availability	Full text available	en
dc.date.updated	2018-06-11T10:32:19Z
dc.description.version	Accepted Version	en
dc.internal.rssid	162343203
dc.description.status	Peer reviewed	en
dc.identifier.journaltitle	Electrochemical Society Transactions	en
dc.internal.copyrightchecked	Yes	en
dc.internal.licenseacceptance	Yes	en
dc.internal.conferencelocation	Honolulu, HI; United States	en
dc.internal.IRISemailaddress	c.odwyer@ucc.ie	en