Preferential <111>A pore propagation mechanism in n-InP anodized in KOH

Show simple item record

dc.contributor.author Lynch, Robert P.
dc.contributor.author O'Dwyer, Colm
dc.contributor.author Quill, Nathan
dc.contributor.author Nakahara, Shohei
dc.contributor.author Newcomb, Simon B.
dc.contributor.author Buckley, D. Noel
dc.date.accessioned 2018-06-14T14:44:51Z
dc.date.available 2018-06-14T14:44:51Z
dc.date.issued 2008-10
dc.identifier.citation Lynch, R., O'Dwyer, C., Quill, N., Nakahara, S., Newcomb, S. B. and Buckley, D. N. (2008) 'Preferential <111>A Pore Propagation Mechanism in n-InP Anodized in KOH', ECS Transactions, 16(3), pp. 393-404. en
dc.identifier.volume 16 en
dc.identifier.startpage 393 en
dc.identifier.endpage 404 en
dc.identifier.issn 1938-5862
dc.identifier.uri http://hdl.handle.net/10468/6306
dc.identifier.doi 10.1149/1.2982579
dc.description.abstract This paper describes the formation of pores during the anodization of n-InP in aqueous KOH. The pores propagate preferentially along the <111>A crystallographic directions and form truncated tetrahedral domains. A model is presented that explains preferential <111>A pore propagation and the uniform diameters of pores. The model outlines how pores can deviate from the <111>A directions and from their characteristic diameters. It also details the effect of variation of carrier concentration on the dimensions of the porous structures. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Electrochemical Society en
dc.relation.ispartof Porous Semiconductors: A Symposium Held in Memory of Vitali Parkhutik and Volker Lehmann - 214th ECS Meeting; Honolulu, HI; United States; 12 October 2008 through 17 October 2008; Code 75747
dc.relation.uri http://ecst.ecsdl.org/content/16/3/393.abstract
dc.rights © 2008 ECS - The Electrochemical Society en
dc.subject Electric conductivity en
dc.subject Carrier concentration en
dc.subject Crystals en
dc.subject Semiconductor materials en
dc.subject Anodization en
dc.subject Crystallographic directions en
dc.subject Inp en
dc.subject Porous structures en
dc.subject Propagation mechanisms en
dc.subject Uniform diameters en
dc.title Preferential <111>A pore propagation mechanism in n-InP anodized in KOH en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Colm O'Dwyer, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: c.odwyer@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-06-11T10:32:19Z
dc.description.version Accepted Version en
dc.internal.rssid 162343203
dc.description.status Peer reviewed en
dc.identifier.journaltitle Electrochemical Society Transactions en
dc.internal.copyrightchecked Yes en
dc.internal.licenseacceptance Yes en
dc.internal.conferencelocation Honolulu, HI; United States en
dc.internal.IRISemailaddress c.odwyer@ucc.ie en


Files in this item

This item appears in the following Collection(s)

Show simple item record

This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement