Design of an adjustable bias circuit using a single-sided CMOS supply for avalanche photodiodes

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Design of an adjustable bias circuit using a single-sided CMOS supply for avalanche photodiodes

Deng, Shijie; Morrison, Alan P.
Date: 2012-06
Copyright: © 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Related: https://ieeexplore.ieee.org/document/6328957/
Citation: Deng, S. and Morrison, A. P. (2012) 'Design of an adjustable bias circuit using a single-sided CMOS supply for avalanche photodiodes', 10th IEEE International NEWCAS Conference, Montreal, QC, Canada, 17-20 June, pp. 65-68. doi: 10.1109/NEWCAS.2012.6328957
Published Version: 10.1109/NEWCAS.2012.6328957

Abstract:

A charge pump circuit operating from a single-sided CMOS supply, capable of biasing avalanche photodiodes up to 40 V with load currents in the mA range is presented. This circuit introduces new design elements that overcome previously published limitations. These elements include pass-gate voltage regulators and a mechanism for linking the negative voltage regulator to the positive voltage output. This design allows linear adjustment of the output voltage from a single control voltage. The circuit has compact dimensions of 1.55 mm × 1 mm, including bond pads, which makes it suitable for hybrid integration in a single package with an APD and two surface-mount capacitors.

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