Design of an adjustable bias circuit using a single-sided CMOS supply for avalanche photodiodes
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Accepted version
Date
2012-06
Authors
Deng, Shijie
Morrison, Alan P.
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published Version
Abstract
A charge pump circuit operating from a single-sided CMOS supply, capable of biasing avalanche photodiodes up to 40 V with load currents in the mA range is presented. This circuit introduces new design elements that overcome previously published limitations. These elements include pass-gate voltage regulators and a mechanism for linking the negative voltage regulator to the positive voltage output. This design allows linear adjustment of the output voltage from a single control voltage. The circuit has compact dimensions of 1.55 mm × 1 mm, including bond pads, which makes it suitable for hybrid integration in a single package with an APD and two surface-mount capacitors.
Description
Keywords
Voltage control , Regulators , Avalanche photodiodes , Charge pumps , Capacitors , Clocks , Integrated circuit modelling , Avalanche diodes , Capacitors , Charge pump circuits , CMOS integrated circuits , Integrated circuit design , Photodiodes , Surface mount technology , Voltage regulators , Adjustable bias circuit design , Charge pump circuit , Single-sided CMOS supply , Biasing , Avalanche photodiode , Load current , Pass-gate voltage regulator , Negative voltage regulator , Positive voltage output , Single control voltage , Bond pad , APD , Surface-mount capacitor
Citation
Deng, S. and Morrison, A. P. (2012) 'Design of an adjustable bias circuit using a single-sided CMOS supply for avalanche photodiodes', 10th IEEE International NEWCAS Conference, Montreal, QC, Canada, 17-20 June, pp. 65-68. doi: 10.1109/NEWCAS.2012.6328957
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Copyright
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