AsH3 gas-phase ex situ doping 3D silicon structures

Show simple item record Duffy, Ray Thomas, Kevin K. Galluccio, Emmanuele Mirabelli, Gioele Sultan, Maeva Kennedy, Noel Petkov, Nikolay Maxwell, Graeme Hydes, Alan O'Connell, Dan Lyons, Colin Sheehan, Brendan Schmidt, Michael Holmes, Justin D. Hurley, Paul K. Pelucchi, Emanuele Connolly, James Hatem, Chris Long, Brenda 2018-08-02T14:51:30Z 2018-08-02T14:51:30Z 2018-07-26
dc.identifier.citation Duffy, R., Thomas, K., Galluccio, E. Mirabelli, G., Sultan, M., Kennedy, N., Petkov, N., Maxwell, G., Hydes, A., O'Connell, D., Lyons, C., Sheehan, B., Schmidt, M., Holmes, J. D., Hurley, P. K., Pelucchi, E., Connolly, J., Hatem, C. and Long, B. (2018) 'AsH3 gas-phase ex situ doping 3D silicon structures', Journal of Applied Physics, 124(4), 045703 (8pp). doi: 10.1063/1.5034213 en
dc.identifier.volume 124 en
dc.identifier.issued 4 en
dc.identifier.startpage 045703(1) en
dc.identifier.endpage 045703(8) en
dc.identifier.issn 0021-8979
dc.identifier.issn 1089-7550
dc.identifier.doi 10.1063/1.5034213
dc.description.abstract Dopant incorporation in Si can be done in situ during epitaxial growth, or ex situ for localised material modification from a variety of sources including ion, solid, liquid, or gas. Gas-phase doping has the advantage that it does not require a thin film deposition, it is more effective at entering tight spaces than a liquid, and it is less damaging and more conformal than a beam-line ion implant. In this work, we apply arsine (AsH3) gas at approximately atmospheric pressures in order to n-type dope three-dimensional (3D) Si device structures. It was observed that the gas-phase doping can be either corrosive or gentle to thin-body Si depending on the process conditions. Initial doping processes caused damage to the Si due to etching, but after process optimisation, the structural integrity of the Si nanostructures could be maintained successfully. Moreover, it was noted that evaluating doping processes entirely on planar Si surfaces can be misleading: processes which appear promising initially may not be transferrable to non-planar thin-body structures like fins or nanowires, due to unwanted Si etching. Overall, we found that gas-phase doping with AsH3 could provide >1020 cm−3 electrically active As concentrations. This high As incorporation makes gas-phase doping very attractive for future gate-all-around devices, where the space between features will decline with continued transistor scaling. en
dc.description.sponsorship Enterprise Ireland (Project Nos. IP-2015-0368 and IP-2017-0605); European Commission (European Union through the European Regional Development Fund (ERDF) under Ireland’s European Structural and Investment Funds Programmes 2014-2020) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.rights © 2018, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics 2018 124:4 and may be found at en
dc.subject Doping en
dc.subject Nanowires en
dc.subject Bipolar transistors en
dc.subject Transition state theory en
dc.subject Corrosion en
dc.title AsH3 gas-phase ex situ doping 3D silicon structures en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en 2018-08-02T09:53:55Z
dc.description.version Accepted Version en
dc.internal.rssid 447867634
dc.contributor.funder Enterprise Ireland en
dc.contributor.funder European Regional Development Fund en
dc.contributor.funder European Commission en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress en
dc.internal.IRISemailaddress en
dc.internal.bibliocheck 26 July 2019: PV permitted 12 months after publication. Update rights-set statement. Make PV primary bitstream. en

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