Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

Loading...
Thumbnail Image
Files
BJN_18-9-2106.pdf(3.37 MB)
Published version
2190-4286-9-199-S1.pdf(71.5 KB)
Additional file 1
Date
2018-08-06
Authors
Kennedy, Noel
Duffy, Ray
Eaton, Luke
Garvey, Shane
Connolly, James
Hatem, Chris
Holmes, Justin D.
Long, Brenda
Journal Title
Journal ISSN
Volume Title
Publisher
Beilstein-Institut
Published Version
Research Projects
Organizational Units
Journal Issue
Abstract
This paper details the application of phosphorus monolayer doping of silicon on insulator substrates. There have been no previous publications dedicated to the topic of MLD on SOI, which allows for the impact of reduced substrate dimensions to be probed. The doping was done through functionalization of the substrates with chemically bound allyldiphenylphosphine dopant molecules. Following functionalization, the samples were capped and annealed to enable the diffusion of dopant atoms into the substrate and their activation. Electrical and material characterisation was carried out to determine the impact of MLD on surface quality and activation results produced by the process. MLD has proven to be highly applicable to SOI substrates producing doping levels in excess of 1 × 1019 cm−3 with minimal impact on surface quality. Hall effect data proved that reducing SOI dimensions from 66 to 13 nm lead to an increase in carrier concentration values due to the reduced volume available to the dopant for diffusion. Dopant trapping was found at both Si–SiO2 interfaces and will be problematic when attempting to reach doping levels achieved by rival techniques.
Description
Keywords
CMOS , Doping , Monolayer , Silicon , Silicon on insulator (SOI)
Citation
Kennedy, N., Duffy, R., Eaton, L., O'Connell, D., Monaghan, S., Garvey, S., Connolly, J.,Hatem, C., Holmes, J. D. and Long, B. (2018) 'Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates', Beilstein Journal of Nanotechnology, 9, pp. 2106-2113. doi: 10.3762/bjnano.9.199